Triangular defect
Triangular defects are the most fatal morphological defects in SiC epitaxial layers. A large number of literature reports have shown that the formation of triangular defects is re...
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Reaction sintering silicon carbide is a method for preparing high performance ceramic materials. It reacts and presses silicon carbide powder with other chemicals under high temperature conditions ...
At present, many countries around all aspects of the new hydrogen research is in full swing, technical difficulties in stepping up to overcome. With the continuous expansion of the scale of hydroge...
With the continuous advancement of science and technology, the semiconductor industry has an increasing demand for high-performance, high-efficiency materials. In this field, silicon carbide crysta...