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SiC coating/coated of Graphite substrate for Semiconductor Susceptors hold and heat semiconductor wafers during thermal processing. A susceptor is made of a material which absorbs energy by induction, conduction, and/or radiation and heats the wafer. Its thermal shock resistance, thermal conductivity, and purity are critical to rapid thermal processing (RTP). Silicon carbide coated graphite, silicon carbide (SiC), and silicon (Si) are commonly used for susceptors depending on the specific thermal and chemical environment. PureSiC® CVD SiC and ClearCarbon™ ultra-pure material which delivers superior thermal stability, corrosion resistance, and durability. Product Description
SiC coating of Graphite substrate for Semiconductor applications produces a part with superior purity and resistance to oxidizing atmosphere.
CVD SiC or CVI SiC is applied to Graphite of simple or complex design parts. Coating can be applied in varying thicknesses and to very large parts.
Technical ceramics are a natural choice for semiconductor thermal processing applications including RTP (Rapid Thermal Processing), Epi (Epitaxial), diffusion, oxidation, and annealing. CoorsTek provides advanced material components specifically designed to withstand thermal shocks with high-purity, sturdy, repeatable performance for high-temperature
Features:
· Excellent Thermal Shock Resistance
· Excellent Physical Shock Resistance
· Excellent Chemical Resistance
· Super High Purity
· Availability in Complex Shape
· Usable under Oxidizing Atmosphere
application:
A wafer needs to pass through several steps before it is ready for use in electronic devices. One important process is silicon epitaxy, in which the wafers are carried on graphite susceptors. The properties and quality of the susceptors have a crucial effect on the quality of the wafer’s epitaxial layer.
Typical Properties of Base Graphite Material:
Apparent Density: | 1.85 g/cm3 |
Electrical Resistivity: | 11 μΩm |
Flexural Strenth: | 49 MPa (500kgf/cm2) |
Shore Hardness: | 58 |
Ash: | <5ppm |
Thermal Conductivity: | 116 W/mK (100 kcal/mhr-℃) |
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