GaN on Silicon Wafer for RF

Short Description:

The GaN on Silicon Wafer for RF, provided by VET Energy, is designed to support high-frequency radio frequency (RF) applications. These wafers combine the advantages of Gallium Nitride (GaN) and Silicon (Si) to offer excellent thermal conductivity and high-power efficiency, making them ideal for RF components used in telecommunications, radar, and satellite systems. VET Energy ensures that each wafer meets the highest performance standards required for advanced semiconductor fabrication.


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VET Energy GaN on Silicon Wafer is a cutting-edge semiconductor solution designed specifically for radio frequency (RF) applications. By epitaxially growing high-quality gallium nitride (GaN) on a silicon substrate, VET Energy delivers a cost-effective and high-performance platform for a wide range of RF devices.

This GaN on Silicon wafer is compatible with other materials such as Si Wafer, SiC Substrate, SOI Wafer, and SiN Substrate, expanding its versatility for various fabrication processes. Additionally, it is optimized for use with Epi Wafer and advanced materials like Gallium Oxide Ga2O3 and AlN Wafer, which further enhance its applications in high-power electronics. The wafers are designed for seamless integration into manufacturing systems using standard Cassette handling for ease of use and increased production efficiency.

VET Energy offers a comprehensive portfolio of semiconductor substrates, including Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, and AlN Wafer. Our diverse product line caters to the needs of various electronic applications, from power electronics to RF and optoelectronics.

GaN on Silicon Wafer offers several advantages for RF applications:

       •  High-frequency performance: GaN's wide bandgap and high electron mobility enable high-frequency operation, making it ideal for 5G and other high-speed communication systems.
       •  High power density: GaN devices can handle higher power densities compared to traditional silicon-based devices, leading to more compact and efficient RF systems.
       •  Low power consumption: GaN devices exhibit lower power consumption, resulting in improved energy efficiency and reduced heat dissipation.

Applications:

       •  5G wireless communication: GaN on Silicon wafers are essential for building high-performance 5G base stations and mobile devices.
       •  Radar systems: GaN-based RF amplifiers are used in radar systems for their high efficiency and wide bandwidth.
       •  Satellite communication: GaN devices enable high-power and high-frequency satellite communication systems.
       •  Military electronics: GaN-based RF components are used in military applications such as electronic warfare and radar systems.

VET Energy offers customizable GaN on Silicon wafers to meet your specific requirements, including different doping levels, thicknesses, and wafer sizes. Our expert team provides technical support and after-sales service to ensure your success.

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WAFERING SPECIFICATIONS

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Item

 8-Inch

6-Inch

 4-Inch

n-P

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6um

≤6um

Bow(GF3YFCD)-Absolute Value

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Beveling

SURFACE FINISH

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Item

8-Inch

6-Inch

4-Inch

n-P

n-Pm

n-Ps

SI

SI

Surface Finish

Double side Optical Polish,Si- Face CMP

SurfaceRoughness

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Edge Chips

None Permitted (length and width≥0.5mm)

Indents

None Permitted

Scratches(Si-Face)

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Cracks

None Permitted

Edge Exclusion

3mm

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