In the silicon carbide single crystal growth process, physical vapor transport is the current mainstream industrialization method. For the PVT growth method, silicon carbide powder has a great infl...
Non-uniformity of ion bombardment
Dry etching is usually a process that combines physical and chemical effects, in which ion bombardment is an important physical etching method. During the etchin...
The third generation of semiconductors, represented by gallium nitride (GaN) and silicon carbide (SiC), have been rapidly developed due to their excellent properties. However, how to accurately mea...
Early wet etching promoted the development of cleaning or ashing processes. Today, dry etching using plasma has become the mainstream etching process. Plasma consists of electrons, cations and radi...
Global Carbon and Graphite Market 2020 Research Strategies and Forecast to 2026 has recently broadcasted a new study to its broad research portfolio, which is titled as Carbon and Graphite Market p...
Semiconductor device production mainly includes discrete devices, integrated circuits and their packaging processes.
Semiconductor production can be divided into three stages: product body materia...