vet-china ensures that every Durable Silicon Carbide Wafer Handling Paddle has excellent performance and durability. This silicon carbide wafer handling paddle uses advanced manufacturing processes to ensure that its structural stability and functionality remain in high temperature and chemical corrosion environments. This innovative design provides excellent support for semiconductor wafer handling, especially for high-precision automated operations.
SiC Cantilever Paddle is a specialized component used in semiconductor manufacturing equipment such as oxidation furnace, diffusion furnace, and annealing furnace, the main use is for wafer loading and unloading, supports and transports wafers during high-temperature processes.
Common structures of SiC cantilever paddle: a cantilever structure, fixed at one end and free at the other, typically has a flat and paddle-like design.
Working principle of SiC cantilever paddle:
The cantilever paddle can move up and down or back and forth within the furnace chamber, it can be used to move wafers from loading areas to processing areas, or out of processing areas, supporting and stabilizing wafers during high-temperature processing.
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Physical properties of Recrystallized Silicon Carbide |
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Property |
Typical Value |
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Working temperature (°C) |
1600°C (with oxygen), 1700°C (reducing environment) |
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SiC content |
> 99.96% |
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Free Si content |
< 0.1% |
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Bulk density |
2.60-2.70 g/cm3 |
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Apparent porosity |
< 16% |
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Compression strength |
> 600 MPa |
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Cold bending strength |
80-90 MPa (20°C) |
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Hot bending strength |
90-100 MPa (1400°C) |
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Thermal expansion @1500°C |
4.70 10-6/°C |
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Thermal conductivity @1200°C |
23 W/m•K |
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Elastic modulus |
240 GPa |
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Thermal shock resistance |
Extremely good |
