Different from S1C discrete devices which pursue high voltage, high power, high frequency and high temperature characteristics, the research goal of SiC integrated circuit is mainly to obtain high ...
Method for making graphite bearing seal
Technical areas
[0001] our campany relates to a graphite bearing seal, in particular to a graphite bearing seal making method.
Background technology
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SEOUL, South Korea, March 1, 2020 /PRNewswire/ – SK Siltron, a global maker of semiconductor wafers, announced today it has completed the acquisition of DuPont’s Silicon Carbide Wafer (...
In a certain packaging process, packaging materials with different thermal expansion coefficients are used. During the packaging process, the wafer is placed on the packaging substrate, and then he...
As a new type of semiconductor material, SiC has become the most important semiconductor material for the manufacture of short-wavelength optoelectronic devices, high temperature devices, radiation...
The “Global Automotive EVP (Electric Vacuum Pump) Market Report” released by Reports and Data is an extensive compilation of the essential aspects of the global automotive EVP (Electric...