Contiguous Wafer Boat

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The Contiguous Wafer Boat from vet-china is designed for efficient wafer handling in semiconductor manufacturing. Engineered with precision, vet-china’s solution ensures thermal stability and chemical resistance, optimizing production processes while minimizing damage and enhancing throughput.

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vet-china introduces a state-of-the-art Contiguous Wafer Boat engineered for the next generation of semiconductor manufacturing. This meticulously designed boat offers unparalleled precision in wafer handling, ensuring seamless operations and significantly reducing the risk of damage during processing.

Built with high-quality materials, the Contiguous Wafer Boat boasts excellent thermal stability and exceptional chemical resistance, making it ideal for high-temperature and harsh chemical environments. Its innovative design ensures that wafers are securely held and perfectly aligned, optimizing throughput and increasing manufacturing efficiency.

This cutting-edge wafer boat is tailored to meet the demanding needs of modern semiconductor fabs, supporting various wafer sizes and configurations. By incorporating the Contiguous Wafer Boat from vet-china into your production line, you can expect enhanced performance, reduced downtime, and increased yield rates.

Experience the difference with vet-china’s commitment to quality and innovation, delivering products that push the boundaries of semiconductor manufacturing. Choose the Contiguous Wafer Boat and elevate your wafer processing capabilities to new heights.

Properties of recrystallized silicon carbide

Recrystallized silicon carbide (R-SiC) is a high-performance material with hardness second only to diamond, which is formed at a high temperature above 2000℃. It retains many excellent properties of SiC, such as high temperature strength, strong corrosion resistance, excellent oxidation resistance, good thermal shock resistance and so on.

● Excellent mechanical properties. Recrystallized silicon carbide has higher strength and stiffness than carbon fiber, high impact resistance, can play a good performance in extreme temperature environments, can play a better counterbalance performance in a variety of situations. In addition, it also has good flexibility and is not easily damaged by stretching and bending, which greatly improves its performance.

● High corrosion resistance. Recrystallized silicon carbide has high corrosion resistance to a variety of media, can prevent the erosion of a variety of corrosive media, can maintain its mechanical properties for a long time, has a strong adhesion, so that it has a longer service life. In addition, it also has good thermal stability, can adapt to a certain range of temperature changes, improve its application effect.

● Sintering does not shrink. Because the sintering process does not shrink, no residual stress will cause deformation or cracking of the product, and parts with complex shapes and high precision can be prepared.

重结晶碳化硅物理特性 Physical properties of Recrystallized Silicon Carbide
性质 / Property	典型数值 / Typical Value
使用温度 / Working temperature (°C)	1600°C (with oxygen), 1700°C (reducing environment)
SiC含量 / SiC content	> 99.96%
自由Si含量 / Free Si content	< 0.1%
体积密度 / Bulk density	2.60-2.70 g/cm³
气孔率 / Apparent porosity	< 16%
抗压强度 / Compression strength	> 600 MPa
常温抗弯强度 / Cold bending strength	80-90 MPa (20°C)
高温抗弯强度 Hot bending strength	90-100 MPa (1400°C)
热膨胀系数 / Thermal expansion @1500°C	4.70 10^-6/°C
导热系数 / Thermal conductivity @1200°C	23 W/m•K
杨氏模量 / Elastic modulus	240 GPa
抗热震性 / Thermal shock resistance	Extremely good

VET Energy is the real manufacturer of customized graphite and silicon carbide products with CVD coating, can supply various customized parts for semiconductor and photovoltaic industry. Our technical team comes from top domestic research institutions, can provide more professional material solutions for you.

We continuously develop advanced processes to provide more advanced materials, and have worked out an exclusive patented technology, which can make the bonding between the coating and the substrate tighter and less prone to detachment.

CVD SiC薄膜基本物理性能 Basic physical properties of CVD SiC coating
性质 / Property	典型数值 / Typical Value
晶体结构 / Crystal Structure	FCC β phase 多晶，主要为（111）取向
密度 / Density	3.21 g/cm³
硬度 / Hardness	2500 维氏硬度（500g load）
晶粒大小 / Grain SiZe	2~10μm
纯度 / Chemical Purity	99.99995%
热容 / Heat Capacity	640 J·kg^-1·K^-1
升华温度 / Sublimation Temperature	2700℃
抗弯强度 / Flexural Strength	415 MPa RT 4-point
杨氏模量 / Young' s Modulus	430 Gpa 4pt bend, 1300℃
导热系数 / Thermal Conductivity	300W·m^-1·K^-1
热膨胀系数 / Thermal Expansion(CTE)	4.5×10^-6K^-1