Non-uniformity of ion bombardment
Dry etching is usually a process that combines physical and chemical effects, in which ion bombardment is an important physical etching method. During the etchin...
The industrial production method of reaction-sintered silicon carbide is to extract high quality quartz sand and calcined petroleum coke in an electric heating furnace. The refined silicon carbide ...
S&P Global Platts senior natural gas writer Harry Weber and S&P Global Market Intelligence midstream…
S&P Global Platts senior natural gas writer Harry Weber and S&P Global Ma...
O Relatório SiC Coated Graphite susceptor Mercado oferece insights aprofundados sobre os principais drivers, oportunidades, desafios, tendências do setor e seu impacto sobre o mercado. O relatór...
As shown in Fig. 3, there are three dominant techniques aiming to provide SiC single crystal with high quality and effciency: liquid phase epitaxy (LPE), physical vapor transport (PVT), and high-te...
The crystal growth furnace is the core equipment for silicon carbide crystal growth. It is similar to the traditional crystalline silicon grade crystal growth furnace. The furnace structure is not ...