Since its invention in the 1960s, the carbon-carbon C/C composites have received great attention from the military, aerospace, and nuclear energy industries. In the early stage, the manufacturing p...
Generally, the busbar between the output end of the DC graphitization furnace rectifier cabinet and the conductive electrode of the furnace head is called a short net, and the busbar used in the gr...
As shown in Fig. 3, there are three dominant techniques aiming to provide SiC single crystal with high quality and effciency: liquid phase epitaxy (LPE), physical vapor transport (PVT), and high-te...
After the wafer has gone through the previous process, the chip preparation is completed, and it needs to be cut to separate the chips on the wafer, and finally packaged. The wafer cutting process ...
The core technology for the growth of SiC epitaxial materials is firstly defect control technology, especially for defect control technology that is prone to device failure or reliability degradati...
O Relatório SiC Coated Graphite susceptor Mercado oferece insights aprofundados sobre os principais drivers, oportunidades, desafios, tendências do setor e seu impacto sobre o mercado. O relatór...