1. SiC crystal growth technology route
PVT (sublimation method),
HTCVD (high temperature CVD),
LPE (liquid phase method)
are three common SiC crystal growth methods;
The most recognized meth...
During the vapor phase epitaxy (VPE) process, the role of the pedestal is to support the substrate and ensure uniform heating during the growth process. Different types of pedestals are suitable fo...
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This paper analyzes the current activated carbon market, conducts an in-depth analys...
In the silicon carbide single crystal growth process, physical vapor transport is the current mainstream industrialization method. For the PVT growth method, silicon carbide powder has a great infl...
Three main types of silicon carbide polymorph
There are about 250 crystalline forms of silicon carbide. Because silicon carbide has a series of homogeneous polytypes with similar crystal structure...