Early wet etching promoted the development of cleaning or ashing processes. Today, dry etching using plasma has become the mainstream etching process. Plasma consists of electrons, cations and radi...
Triangular defect
Triangular defects are the most fatal morphological defects in SiC epitaxial layers. A large number of literature reports have shown that the formation of triangular defects is...
After the wafer has gone through the previous process, the chip preparation is completed, and it needs to be cut to separate the chips on the wafer, and finally packaged. The wafer cutting process ...
Due to the rapid development of the lithium battery market in recent years, the investment and expansion projects of anode materials enterprises have increased. Since 2019, the new production capac...
COVID-19 pandemic has turned out to be a major growth determinant in the industrial automation sector. With the integration of digital infrastructure to monitor and control public health, industria...
The third generation of semiconductors, represented by gallium nitride (GaN) and silicon carbide (SiC), have been rapidly developed due to their excellent properties. However, how to accurately mea...