1. Third-generation semiconductors
The first-generation semiconductor technology was developed based on semiconductor materials such as Si and Ge. It is the material basis for the development of tr...
According to the overall arrangement of the standardization work, 10 mandatory national standard plan items such as the “Graphite Product Energy Consumption Rating” will be published (see Annex 1),...
Atmospheric pressure sintered silicon carbide is a non-metallic carbide with silicon and carbon covalent bond, and its hardness is second only to diamond and boron carbide. The chemical formula is ...
The crystal growth furnace is the core equipment for silicon carbide crystal growth. It is similar to the traditional crystalline silicon grade crystal growth furnace. The furnace structure is not ...
Destinus, a Swiss startup, announced that it will participate in an initiative by the Spanish Ministry of Science to help the Spanish government develop a hydrogen-powered supersonic aircraft.
Spa...
SIC coated stone grinding base has the characteristics of high temperature resistance, oxidation resistance, high purity, acid, alkali, salt and organic reagents, and stable physical and chemical f...