We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS2 and graphene. This heterostructu...
Reaction-sintered silicon carbide is a new type of high-tech ceramics, which has high strength, high hardness, good wear resistance and corrosion resistance, and is widely used in metallurgy, petro...
2. Epitaxial thin film growth
The substrate provides a physical support layer or conductive layer for Ga2O3 power devices. The next important layer is the channel layer or epitaxial layer used f...
ABB has signed a Memorandum of Understanding (MOU) with Hydrogène de France to manufacture jointly megawatt-scale fuel cell systems capable of powering ocean-going vessels (OGVs). The MOU between A...
Wide bandgap (WBG) semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received widespread attention. People have high expectations for the application prospects of s...
Silicon carbide is a compound of Silicon and Carbon with chemical formula SiC. Today SiC coated graphite is widely used in high-temperature/high-voltage semiconductor electronics.
Currently major p...