SiC has excellent physical and chemical properties, such as high melting point, high hardness, corrosion resistance and oxidation resistance. Especially in the range of 1800-2000 ℃, SiC has good ab...
The third generation of semiconductors, represented by gallium nitride (GaN) and silicon carbide (SiC), have been rapidly developed due to their excellent properties. However, how to accurately mea...
The crystal growth furnace is the core equipment for silicon carbide crystal growth. It is similar to the traditional crystalline silicon grade crystal growth furnace. The furnace structure is not ...
Japan: Developed the Strategic Roadmap for Oxygen Energy and Fuel Cells in 2014, and entered the recovery economy in 2040.
European Union: The European Road Map: A Sustainable Development Path for...
2. Epitaxial thin film growth
The substrate provides a physical support layer or conductive layer for Ga2O3 power devices. The next important layer is the channel layer or epitaxial layer used f...
Recently, Yadi and the People’s Daily launched the “Who is Chinese?” public welfare micro-video, the emergence of the Yadi graphene technical engineer. Through more than three yea...