2. Epitaxial thin film growth
The substrate provides a physical support layer or conductive layer for Ga2O3 power devices. The next important layer is the channel layer or epitaxial layer used f...
The global Silicon Carbide Coating market study presents an all in all compilation of the historical, current and future outlook of the market as well as the factors responsible for such a growth. ...
Three main types of silicon carbide polymorph
There are about 250 crystalline forms of silicon carbide. Because silicon carbide has a series of homogeneous polytypes with similar crystal structure...
The performance of zirconia ceramic products is susceptible to the following factors:
1. The influence of raw materials
High quality zirconia powder is selected, and the performance factors and co...
As shown in Fig. 3, there are three dominant techniques aiming to provide SiC single crystal with high quality and effciency: liquid phase epitaxy (LPE), physical vapor transport (PVT), and high-te...
The growth process of monocrystalline silicon is completely carried out in the thermal field. A good thermal field is conducive to improving the quality of crystals and has a higher crystallization...