Best quality Graphite Boat - gallium arsenide-phosphide epitaxial – VET Energy

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Best quality Graphite Boat - gallium arsenide-phosphide epitaxial – VET Energy Detail:

Basic technical parameter
to gallium arsenide-phosphide structures

1,SubstrateGaAs  
a. Conductivitytype electronic
b. Resistivity, ohm-cm 0,008
c. Crystal-latticeorientation (100)
d. Surface misorientation (1−3)°
2. Epitaxial layer GaAs1-х Pх  
a. Conductivitytype
electronic
b. Phosphorus content in the transition layer
from х = 0 to х ≈ 0,4
c. Phosphorus content in a layer of constant composition
х ≈ 0,4
d. Carrier concentration, сm3
(0,2−3,0)·1017
e. Wavelength at maximum of photoluminescence spectrum, nm 645−673  nm
f. Wavelength at the maximum of the electroluminescence spectrum
650−675 nm
g. Constant layer thickness, micron
At least 8 nm
h. Layerthickness (total), micron
At least30 nm
3 Plate with epitaxial layer  
a. Deflection, micron At most 100 um
b. Thickness, micron 360−600 um
c. Squarecentimetre
At least 6 cm2
d. Specific luminous intensity (after diffusionZn), cd/amp
At least 0,05 cd/amp

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Best quality Graphite Boat - gallium arsenide-phosphide epitaxial – VET Energy detail pictures

Best quality Graphite Boat - gallium arsenide-phosphide epitaxial – VET Energy detail pictures

Best quality Graphite Boat - gallium arsenide-phosphide epitaxial – VET Energy detail pictures

Best quality Graphite Boat - gallium arsenide-phosphide epitaxial – VET Energy detail pictures


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