6 Inch P Type Silicon Wafer

Short Description:

VET Energy 6-inch P-type silicon wafer is a high-quality semiconductor base material, widely used in the manufacture of various electronic devices. VET Energy uses advanced CZ growth process to ensure that the wafer has excellent crystal quality, low defect density and high uniformity.


Product Detail

Product Tags

VET Energy's product line is not limited to silicon wafers. We also provide a wide range of semiconductor substrate materials, including SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, etc., as well as new wide bandgap semiconductor materials such as Gallium Oxide Ga2O3 and AlN Wafer. These products can meet the application needs of different customers in power electronics, radio frequency, sensors and other fields.

Application fields:
•  Integrated circuits: As the basic material for integrated circuit manufacturing, P-type silicon wafers are widely used in various logic circuits, memories, etc.
•  Power devices: P-type silicon wafers can be used to make power devices such as power transistors and diodes.
•  Sensors: P-type silicon wafers can be used to make various types of sensors, such as pressure sensors, temperature sensors, etc.
•  Solar cells: P-type silicon wafers are an important component of solar cells.

VET Energy provides customers with customized wafer solutions, and can customize wafers with different resistivity, different oxygen content, different thickness and other specifications according to the specific needs of customers. In addition, we also provide professional technical support and after-sales service to help customers solve various problems encountered in the production process.

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WAFERING SPECIFICATIONS

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Item

 8-Inch

6-Inch

 4-Inch

n-P

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6um

≤6um

Bow(GF3YFCD)-Absolute Value

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Beveling

SURFACE FINISH

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Item

8-Inch

6-Inch

4-Inch

n-P

n-Pm

n-Ps

SI

SI

Surface Finish

Double side Optical Polish,Si- Face CMP

SurfaceRoughness

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Edge Chips

None Permitted (length and width≥0.5mm)

Indents

None Permitted

Scratches(Si-Face)

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Cracks

None Permitted

Edge Exclusion

3mm

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