4 Inch GaN on SiC Wafer

Short Description:

VET Energy’s 4-inch GaN on SiC wafer is a revolutionary product in the field of power electronics. This wafer combines the excellent thermal conductivity of silicon carbide (SiC) with the high power density and low loss of gallium nitride (GaN), making it an ideal choice for making high-frequency, high-power devices. VET Energy ensures the excellent performance and consistency of the wafer through advanced MOCVD epitaxial technology.

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VET Energy's product line is not limited to GaN on SiC wafers. We also provide a wide range of semiconductor substrate materials, including Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, etc. In addition, we are also actively developing new wide bandgap semiconductor materials, such as Gallium Oxide Ga2O3 and AlN Wafer, to meet the future power electronics industry's demand for higher performance devices.

VET Energy provides flexible customization services, and can customize GaN epitaxial layers of different thicknesses, different types of doping, and different wafer sizes according to the specific needs of customers. In addition, we also provide professional technical support and after-sales service to help customers quickly develop high-performance power electronic devices.

WAFERING SPECIFICATIONS

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Item	8-Inch	6-Inch			4-Inch
Item	n-P	n-Pm	n-Ps	SI	SI
TTV(GBIR)	≤6um	≤6um
Bow(GF3YFCD)-Absolute Value	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
LTV(SBIR)-10mmx10mm	<2μm
Wafer Edge	Beveling

SURFACE FINISH

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Item	8-Inch	6-Inch			4-Inch
	n-P	n-Pm	n-Ps	SI	SI
Surface Finish	Double side Optical Polish,Si- Face CMP
SurfaceRoughness	(10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm
Edge Chips	None Permitted (length and width≥0.5mm)
Indents	None Permitted
Scratches(Si-Face)	Qty.≤5,Cumulative Length≤0.5×wafer diameter	Qty.≤5,Cumulative Length≤0.5×wafer diameter			Qty.≤5,Cumulative Length≤0.5×wafer diameter
Cracks	None Permitted
Edge Exclusion	3mm