4 Inch GaAs Wafer

Short Description:

VET Energy 4 inch GaAs wafer is a high-purity semiconductor substrate renowned for its excellent electronic properties, making it an ideal choice for a wide range of applications. VET Energy employs advanced crystal growth techniques to produce GaAs wafers with exceptional uniformity, low defect density, and precise doping levels.


Product Detail

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The 4 Inch GaAs Wafer from VET Energy is an essential material for high-speed and optoelectronic devices, including RF amplifiers, LEDs, and solar cells. These wafers are known for their high electron mobility and ability to operate at higher frequencies, making them a key component in advanced semiconductor applications. VET Energy ensures top-quality GaAs wafers with uniform thickness and minimal defects, suitable for a range of demanding fabrication processes.

These 4 Inch GaAs Wafers are compatible with various semiconductor materials such as Si Wafer, SiC Substrate, SOI Wafer, and SiN Substrate, making them versatile for integration into different device architectures. Whether used for Epi Wafer production or alongside cutting-edge materials like Gallium Oxide Ga2O3 and AlN Wafer, they offer a reliable foundation for next-generation electronics. In addition, the wafers are fully compatible with Cassette-based handling systems, ensuring smooth operations in both research and high-volume manufacturing environments.

VET Energy offers a comprehensive portfolio of semiconductor substrates, including Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, and AlN Wafer. Our diverse product line caters to the needs of various electronic applications, from power electronics to RF and optoelectronics.

VET Energy offers customizable GaAs wafers to meet your specific requirements, including different doping levels, orientations, and surface finishes. Our expert team provides technical support and after-sales service to ensure your success.

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WAFERING SPECIFICATIONS

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Item

 8-Inch

6-Inch

 4-Inch

n-P

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6um

≤6um

Bow(GF3YFCD)-Absolute Value

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Beveling

SURFACE FINISH

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Item

8-Inch

6-Inch

4-Inch

n-P

n-Pm

n-Ps

SI

SI

Surface Finish

Double side Optical Polish,Si- Face CMP

SurfaceRoughness

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Edge Chips

None Permitted (length and width≥0.5mm)

Indents

None Permitted

Scratches(Si-Face)

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Cracks

None Permitted

Edge Exclusion

3mm

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