2022 high quality MOCVD Susceptor Buy online in China, Sic Graphite epitaxy susceptors,
Graphite support substrates, Graphite Susceptors, Graphite Susceptors for SiC Epitaxy, Graphite Susceptors for Silicon, Graphite susceptors with silicon carbide coating, GRAPHITE TOOLS IN SEMICONDUCTOR Graphite Trays Graphite Wafer Susceptors HIGH PURITY GRAPHITE TOOLS Opto-electronics, satellite platforms for the MOCVD, SiC coated graphite satellite platforms for MOCVD,
Special advantages of our SiC-coated graphite susceptors include extremely high purity, homogenous coating and an excellent service life. They also have high chemical resistance and thermal stability properties.
SiC coating of Graphite substrate for Semiconductor applications produces a part with superior purity and resistance to oxidizing atmosphere.
CVD SiC or CVI SiC is applied to Graphite of simple or complex design parts. Coating can be applied in varying thicknesses and to very large parts.
Features:
· Excellent Thermal Shock Resistance
· Excellent Physical Shock Resistance
· Excellent Chemical Resistance
· Super High Purity
· Availability in Complex Shape
· Usable under Oxidizing Atmosphere
Typical Properties of Base Graphite Material:
Apparent Density: | 1.85 g/cm3 |
Electrical Resistivity: | 11 μΩm |
Flexural Strenth: | 49 MPa (500kgf/cm2) |
Shore Hardness: | 58 |
Ash: | <5ppm |
Thermal Conductivity: | 116 W/mK (100 kcal/mhr-℃) |
Carbon supplies susceptors and graphite components for all current epitaxy reactors. Our portfolio includes barrel susceptors for applied and LPE units, pancake susceptors for LPE, CSD, and Gemini units, and single-wafer susceptors for applied and ASM units.By combining strong partnerships with leading OEMs, materials expertise and manufacturing know-how, SGL offers the optimal design for your application.