gallium arsenide-phosphide epitaxial

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Gallium arsenide-phosphide epitaxial structures ,similar to produced structures of the substrate ASP type (ET0.032.512TU), for the. manufacture of planar red LED crystals.

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Gallium arsenide-phosphide epitaxial structures ,similar to produced structures of the substrate ASP type (ET0.032.512TU), for the. manufacture of planar red LED crystals.

Basic technical parameter
to gallium arsenide-phosphide structures

1,SubstrateGaAs
a. Conductivitytype	electronic
b. Resistivity, ohm-cm	0,008
c. Crystal-latticeorientation	(100)
d. Surface misorientation	(1−3)°

2. Epitaxial layer GaAs1-х Pх
a. Conductivitytype	electronic
b. Phosphorus content in the transition layer	from х = 0 to х ≈ 0,4
c. Phosphorus content in a layer of constant composition	х ≈ 0,4
d. Carrier concentration, сm3	(0,2−3,0)·1017
e. Wavelength at maximum of photoluminescence spectrum, nm	645−673 nm
f. Wavelength at the maximum of the electroluminescence spectrum	650−675 nm
g. Constant layer thickness, micron	At least 8 nm
h. Layerthickness (total), micron	At least30 nm

3 Plate with epitaxial layer
a. Deflection, micron	At most 100 um
b. Thickness, micron	360−600 um
c. Squarecentimetre	At least 6 cm2
d. Specific luminous intensity (after diffusionZn), cd/amp	At least 0,05 cd/amp