12 Inch SOI Wafer

Short Description:

Experience innovation like never before with the state-of-the-art 12 Inch SOI Wafer, a technological marvel proudly brought to you by VET Energy. Crafted with precision and expertise, this Silicon-On-Insulator wafer redefines industry standards, offering unparalleled quality and performance.


Product Detail

Product Tags

VET Energy 12-inch SOI wafer is a high-performance semiconductor substrate material, which is highly favored for its excellent electrical properties and unique structure. VET Energy uses advanced SOI wafer manufacturing processes to ensure that the wafer has extremely low leakage current, high speed and radiation resistance, providing a solid foundation for your high-performance integrated circuits.

VET Energy's product line is not limited to SOI wafers. We also provide a wide range of semiconductor substrate materials, including Si Wafer, SiC Substrate, SiN Substrate, Epi Wafer, etc., as well as new wide bandgap semiconductor materials such as Gallium Oxide Ga2O3 and AlN Wafer. These products can meet the application needs of different customers in power electronics, RF, sensors and other fields.

Focusing on excellence, our SOI wafers also use advanced materials such as gallium oxide Ga2O3, cassettes and AlN wafers to ensure reliability and efficiency at every operational level. Trust VET Energy to provide cutting-edge solutions that pave the way for technological advancement.

Unleash the potential of your project with the superior performance of VET Energy 12-inch SOI wafers. Boost your innovation capabilities with wafers that embody quality, precision and innovation, laying the foundation for success in the dynamic field of semiconductor technology. Choose VET Energy for premium SOI wafer solutions that exceed expectations.

第6页-36
第6页-35

WAFERING SPECIFICATIONS

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Item

 8-Inch

6-Inch

 4-Inch

n-P

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6um

≤6um

Bow(GF3YFCD)-Absolute Value

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Beveling

SURFACE FINISH

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Item

8-Inch

6-Inch

4-Inch

n-P

n-Pm

n-Ps

SI

SI

Surface Finish

Double side Optical Polish,Si- Face CMP

SurfaceRoughness

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Edge Chips

None Permitted (length and width≥0.5mm)

Indents

None Permitted

Scratches(Si-Face)

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Qty.≤5,Cumulative
Length≤0.5×wafer diameter

Cracks

None Permitted

Edge Exclusion

3mm

tech_1_2_size
下载 (2)

  • Previous:
  • Next:

  • WhatsApp Online Chat !