Siyazi ukuthi siyachuma kuphela uma singaqinisekisa ukuncintisana kwethu kwentengo okuhlanganisiwe nekhwalithi enenzuzo ngesikhathi esifanayo ku-Top Suppliers Grey Black Silicon Carbide Sic Carborundum China High Purity, Samukela amakhasimende amasha nawangaphambilini azo zonke izigaba zokuphila ukuze akhulume nathi ubudlelwano benhlangano obubonakalayo besikhathi esizayo futhi bathole impumelelo efanayo!
Siyazi ukuthi siyachuma kuphela uma singaqinisekisa ukuncintisana kwethu kwentengo okuhlanganisiwe kanye nekhwalithi enenzuzo ngesikhathi esifanayoI-China Coating Material, I-Titanium Dioxide, Inkampani yethu isekela umoya "wokusungula izinto ezintsha, ukuvumelana, ukusebenza kweqembu kanye nokwabelana, imikhondo, inqubekelaphambili ye-pragmatic". Sinike ithuba futhi sizokhombisa ikhono lethu. Ngosizo lwakho lomusa, sikholwa ukuthi singakha ikusasa eliqhakazile nawe sindawonye.
Izinhlanganisela zekhabhoni / ikhabhoni(okuzobizwa kamuva ngokuthi “C / C noma CFC”) iwuhlobo lwento eyinhlanganisela esekelwe kukhabhoni futhi iqiniswe yi-carbon fibre kanye nemikhiqizo yayo (i-carbon fibre preform). Inakho kokubili inertia ye-carbon namandla aphezulu e-carbon fiber. Inezici ezinhle zokusebenzisa imishini, ukumelana nokushisa, ukumelana nokugqwala, i-friction damping kanye nezici ze-thermal kanye ne-electrical conductivity.
I-CVD-SiCukugqoka kunezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana ne-oxidation, ukuhlanzeka okuphezulu, ukumelana ne-asidi & alkali kanye ne-reagent ye-organic, enezakhiwo ezinzile ngokomzimba namakhemikhali.
Uma kuqhathaniswa ne-high-purity graphite materials, i-graphite iqala ukufaka i-oxidize ku-400C, okuzobangela ukulahlekelwa kwempushana ngenxa ye-oxidation, okuholela ekungcoleni kwemvelo kumadivayisi we-peripheral kanye nama-vacuum chamber, futhi kwandise ukungcola kwemvelo ehlanzekile.
Kodwa-ke, ukufakwa kwe-SiC kungagcina ukuzinza ngokomzimba namakhemikhali kumadigri ayi-1600, Kusetshenziswa kabanzi embonini yesimanje, ikakhulukazi embonini ye-semiconductor.
Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC. I-SIC eyakhiwe ihlanganiswe ngokuqinile nesisekelo se-graphite, inikeze isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite compact, i-Porosity-free, ukumelana nokushisa okuphezulu, ukumelana nokugqwala kanye nokumelana ne-oxidation.
Izici eziyinhloko:
1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.
2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:
| I-SiC-CVD | ||
| Ukuminyana | (g/cc)
| 3.21 |
| Amandla e-Flexural | (Mpa)
| 470 |
| Ukunwetshwa kwe-thermal | (10-6/K) | 4
|
| I-Thermal conductivity | (W/mK) | 300
|
