Imvamisa ukuthambekela kumakhasimende, futhi kuyinhloso yethu enkulu ukuba singagcini nje ngokuba umhlinzeki onedumela elihle, onokwethenjelwa futhi othembekile, kodwa futhi sibe uzakwethu wamakhasimende ethu Ngenani Eliphansi Kakhulu I-China 1200c Plasma Enhanced Chemical Vapor Deposition.I-PecvdI-Vacuum Funace, Ukuze ufunde kabanzi mayelana nokuthi yini esingakwenzela yona, xhumana nathi nganoma yisiphi isikhathi. Sibheke ngabomvu ukusungula ubudlelwano bebhizinisi obuhle nobesikhathi eside nawe.
Ngokuvamile kuthambekele kumakhasimende, futhi kuyinhloso yethu enkulu ukuba singagcini nje ngokuba umhlinzeki ohlonishwa kakhulu, othembekile nothembekile, kodwa futhi sibe uzakwethu wamakhasimende ethuI-China Plasma Ethuthukisiwe I-Chemical Vapor Deposition, I-Pecvd, Imishini yethu ethuthukisiwe, ukuphathwa kwekhwalithi okuhle kakhulu, ucwaningo kanye nekhono lokuthuthuka kwenza intengo yethu yehle. Inani esilinikezayo lingase lingabi eliphansi kakhulu, kodwa siyaqinisekisa ukuthi liyaqhudelana ngokuphelele! Siyakwamukela ukuxhumana nathi ngokushesha ukuze uthole ubudlelwano bebhizinisi esizayo kanye nempumelelo mutual!
Izinhlanganisela zekhabhoni / ikhabhoni(okuzobizwa kamuva ngokuthi “C / C noma CFC”) iwuhlobo lwento eyinhlanganisela esekelwe kukhabhoni futhi iqiniswe yi-carbon fibre kanye nemikhiqizo yayo (i-carbon fibre preform). Inakho kokubili inertia ye-carbon namandla aphezulu e-carbon fiber. Inezici ezinhle zokusebenzisa imishini, ukumelana nokushisa, ukumelana nokugqwala, i-friction damping kanye nezici ze-thermal kanye ne-electrical conductivity.
I-CVD-SiCukugqoka kunezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana ne-oxidation, ukuhlanzeka okuphezulu, ukumelana ne-asidi & alkali kanye ne-reagent ye-organic, enezakhiwo ezinzile ngokomzimba namakhemikhali.
Uma kuqhathaniswa ne-high-purity graphite materials, i-graphite iqala ukufaka i-oxidize ku-400C, okuzobangela ukulahlekelwa kwempushana ngenxa ye-oxidation, okuholela ekungcoleni kwemvelo kumadivayisi we-peripheral kanye nama-vacuum chamber, futhi kwandise ukungcola kwemvelo ehlanzekile.
Kodwa-ke, ukufakwa kwe-SiC kungagcina ukuzinza ngokomzimba namakhemikhali kumadigri ayi-1600, Kusetshenziswa kabanzi embonini yesimanje, ikakhulukazi embonini ye-semiconductor.
Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC. I-SIC eyakhiwe ihlanganiswe ngokuqinile nesisekelo se-graphite, inikeze isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite compact, i-Porosity-free, ukumelana nokushisa okuphezulu, ukumelana nokugqwala kanye nokumelana ne-oxidation.
Izici eziyinhloko:
1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.
2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:
| I-SiC-CVD | ||
| Ukuminyana | (g/cc)
| 3.21 |
| Amandla e-Flexural | (Mpa)
| 470 |
| Ukunwetshwa kwe-thermal | (10-6/K) | 4
|
| I-Thermal conductivity | (W/mK) | 300
|
