Isisekelo se-wafer ye-Silicon Carbide

Incazelo emfushane:


  • Indawo Yomsuka:E-Zhejiang, China (Mainland)
  • Inombolo Yemodeli:Isikebhe3002
  • Ukwakhiwa Kwekhemikhali:I-graphite ehlanganiswe ne-SiC
  • Ukungazweli Kagesi:11 μΩm
  • Ukuqina Kwasogwini: 58
  • I-Thermal Conductivity:116 W/mK (100 kcal/mhr-℃)
  • Isampula:Iyatholakala
  • Ikhodi ye-HS:6903100000
  • I gama le-brand:I-VET
  • Ukuminyana:1.85 g/cm3
  • Amandla e-Flexural:49MPa
  • Umlotha: <5ppm
  • Ikhwalithi:Iphelele
  • Isicelo:I-Semiconductor / Photovoltaic
  • Imininingwane Yomkhiqizo

    Omaka bomkhiqizo

    I-Silicon Carbide enamathelaisisekelo se-wafer,
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    Incazelo Yomkhiqizo

    I-SiCenamathelayeGraphitei-substrateokweI-semiconductorizinhlelo zokusebenza zikhiqiza ingxenye enobumsulwa obuphakeme nokumelana nomkhathi we-oxidizing.
    I-CVDI-SiC noma i-CVI SiC isetshenziswa ku-Graphite yezingxenye zokuklama ezilula noma eziyinkimbinkimbi. Ukumboza kungasetshenziswa ngobukhulu obuhlukahlukene kanye nezingxenye ezinkulu kakhulu.

    I-SiC coating/coated MOCVD Susceptor

    Izici:
    · I-Thermal Shock Resistance enhle kakhulu
    · Ukumelana Nokushaqeka Okuhle Kakhulu Komzimba
    · Excellent Chemical Resistance
    · Super High Purity
    · Ukutholakala kokuthi I-Complex Shape
    · Isebenziseka ngaphansi kwe-Oxidizing Atmosphere

    Izici Ezijwayelekile Ze-Base Graphite Material:

    KubonakalaUkuminyana: 1.85 g/cm3
    Ukungazweli Kagesi: 11 μΩm
    I-Flexural Strenth: 49 MPa (500kgf/cm2)
    Ukuqina Kwasogwini: 58
    Umlotha: <5ppm
    I-Thermal Conductivity: 116 W/mK (100 kcal/mhr-)

    Ulwazi Lwenkampani

    111

    Imishini Yezimboni

    222

    Inqolobane

    333

    Izitifiketi

    Izitifiketi22

    ama-faq

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