I-Silicon Carbide Coated Wafer Susceptor Disc

Incazelo emfushane:

I-VET Energy silicon carbide coated wafer susceptor disc iwumkhiqizo osebenza kahle kakhulu oklanyelwe ukunikeza ukusebenza okungaguquki nokuthembekile esikhathini eside. Inokumelana nokushisa okuhle kakhulu nokufana okushisayo, ukuhlanzeka okuphezulu, ukumelana nokuguguleka, okuyenza ibe yisixazululo esiphelele sezinhlelo zokusebenza zokucubungula ama-wafer.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Silicon Carbide Wafer Disc iyisici esibalulekile esisetshenziswa ezinqubweni ezihlukahlukene zokukhiqiza ze-semiconductor. sisebenzisa ubuchwepheshe bethu obunelungelo lobunikazi ukwenza idiski ye-silicon carbide iphephe ngokuhlanzeka okuphezulu kakhulu, ukufana okuhle kokunamathela kanye nempilo yesevisi enhle kakhulu, kanye nokumelana namakhemikhali aphezulu kanye nezakhiwo ezishisayo zokuzinza.

I-VET Energy ingumkhiqizi wangempela wemikhiqizo eyenziwe ngokwezifiso ye-graphite ne-silicon carbide enezingubo ezihlukene njenge-SiC, i-TaC, i-pyrolytic carbon, i-glassy-carbon, njll., ingahlinzeka ngezingxenye ezihlukahlukene ezenziwe ngokwezifiso ze-semiconductor kanye nemboni ye-photovoltaic. Ithimba lethu lezobuchwepheshe livela ezikhungweni eziphezulu zocwaningo lwasekhaya, lingakunikeza izixazululo zempahla echwepheshile.

Siyaqhubeka nokuthuthukisa izinqubo ezithuthukisiwe ukuze sinikeze izinto ezithuthuke kakhulu, futhi sisebenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukuhlangana phakathi kokumboza ne-substrate kuqine futhi kungabi lula ukuhlukaniswa.

Fukudla kwemikhiqizo yethu:

1. Ukumelana nokushisa okuphezulu kwe-oxidation kufika ku-1700.
2. Ukuhlanzeka okuphezulu kanyeukufana okushisayo
3. Ukumelana nokugqwala okuhle kakhulu: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
4. Ukuqina okuphezulu, indawo ehlangene, izinhlayiya ezinhle.
5. Impilo yesevisi ende futhi ihlala isikhathi eside

I-CVD SiC薄膜基本物理性能

Izakhiwo eziyisisekelo ze-CVD SiCenamathela

性质 / Impahla

典型数值 / Inani Elijwayelekile

晶体结构 / Isakhiwo seCrystal

I-FCC β isigaba多晶,主要為(111)取向

密度 / Ukuminyana

3.21 g/cm³

硬度 / Ukuqina

2500 维氏硬度 (500g umthwalo)

晶粒大小 / Uhlamvu SiZe

2 ~ 10μm

纯度 / Ukuhlanzeka Kwamakhemikhali

99.99995%

热容 / Amandla Okushisa

640 J·kg-1·K-1

升华温度 / I-Sublimation Temperature

2700 ℃

抗弯强度 / Amandla Aguquguqukayo

415 MPa RT 4-iphoyinti

杨氏模量 / I-Modulus Encane

430 Gpa 4pt ukugoba, 1300℃

导热系数 / ThermalI-Conductivity

300Wm-1·K-1

热膨胀系数 / Ukwandiswa Kokushisa (CTE)

4.5×10-6K-1

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