Eminyakeni embalwa edlule, inkampani yethu yamunca futhi yagaya ubuchwepheshe obuphambili ekhaya naphesheya. Khonamanjalo, inkampani yethu izintonga ithimba ochwepheshe abazinikele ekuthuthukiseniI-SiC imbozwe nge-Graphite substrate yeSemiconductor, i-silicon carbide coating,I-MOCVD Susceptor, Ukugcizelelwa okukhethekile ekufakweni kwezinto ezithengiswayo ukugwema noma yimuphi umonakalo ngesikhathi sokuthutha,Ukunakwa okuningiliziwe kwempendulo enenzuzo namathiphu amaklayenti ethu ahlonishwayo.
Eminyakeni embalwa edlule, inkampani yethu yamunca futhi yagaya ubuchwepheshe obuphambili ekhaya naphesheya. Khonamanjalo, inkampani yethu izintonga ithimba ochwepheshe abazinikele ekuthuthukiseniI-MOCVD Susceptor, I-SiC imbozwe nge-Graphite substrate yeSemiconductor, I-Silicon Carbide Coating, Njengomkhiqizi onolwazi futhi siyakwamukela ukuhleleka okwenziwe ngokwezifiso futhi singakwenza kufane nesithombe sakho noma ukucaciswa kwesampula. Umgomo oyinhloko wenkampani yethu ukuphila inkumbulo eyanelisayo kuwo wonke amakhasimende, futhi sisungule ubudlelwano bebhizinisi besikhathi eside nabathengi nabasebenzisi emhlabeni wonke.

I-CVD-SiC enamathela inezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana ne-oxidation, ukuhlanzeka okuphezulu, ukumelana ne-asidi & alkali kanye ne-reagent ephilayo, enezakhiwo ezinzile ngokomzimba namakhemikhali.

Uma kuqhathaniswa ne-high-purity graphite materials, i-graphite iqala ukufaka i-oxidize ku-400C, okuzobangela ukulahlekelwa kwempushana ngenxa ye-oxidation, okuholela ekungcoleni kwemvelo kumadivayisi we-peripheral kanye nama-vacuum chamber, futhi kwandise ukungcola kwemvelo ehlanzekile.

Kodwa-ke, ukufakwa kwe-SiC kungagcina ukuzinza ngokomzimba namakhemikhali kumadigri ayi-1600, Kusetshenziswa kabanzi embonini yesimanje, ikakhulukazi embonini ye-semiconductor.

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC. I-SIC eyakhiwe ihlanganiswe ngokuqinile nesisekelo se-graphite, inikeze isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite compact, i-Porosity-free, ukumelana nokushisa okuphezulu, ukumelana nokugqwala kanye nokumelana ne-oxidation.

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.

2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:

Ikhono Lokuhlinzeka:

10000 Ucezu/Izingcezu Ngenyanga
Ukupakishwa Nokulethwa:
Ukupakisha:Ukupakisha Okujwayelekile & Okuqinile
Isikhwama sePoly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo:

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