I-SiC embozwe nge-Graphite substrate ye-Semiconductor, i-Silicon carbide coating, i-MOCVD Susceptor

Incazelo emfushane:

Ukufakwa kwe-SiC ye-Graphite substrate yezinhlelo zokusebenza ze-Semiconductor kukhiqiza ingxenye enobumsulwa obuphakeme kanye nokumelana nomoya we-oxidizing. I-CVD SiC noma i-CVI SiC isetshenziswa kuGraphite yezingxenye zokuklama ezilula noma eziyinkimbinkimbi. Ukumboza kungasetshenziswa ngobukhulu obuhlukahlukene kanye nezingxenye ezinkulu kakhulu.


  • Indawo Yomsuka:E-Zhejiang, China (Mainland)
  • Inombolo Yemodeli:Inombolo Yemodeli:
  • Ukwakhiwa Kwekhemikhali:I-graphite ehlanganiswe ne-SiC
  • Amandla e-Flexural:470Mpa
  • I-Thermal conductivity:300 W/mK
  • Ikhwalithi:Iphelele
  • Umsebenzi:I-CVD-SiC
  • Isicelo:I-Semiconductor / Photovoltaic
  • Ukuminyana:3.21 g/cc
  • Ukunwetshwa kwe-thermal:4 10-6/K
  • Umlotha: <5ppm
  • Isampula:Iyatholakala
  • Ikhodi ye-HS:6903100000
  • Imininingwane Yomkhiqizo

    Omaka bomkhiqizo

    I-SiC coating coating ofI-graphite substrate yeSemiconductor, i-silicon carbide coating,I-MOCVD Susceptor,
    I-graphite substrate yeSemiconductor, I-MOCVD Susceptor, I-SiC Coated, I-SiC Coating, I-Silicon carbide coating ye-Semiconductor,

    Incazelo Yomkhiqizo

    Ukufakwa kwe-SiCI-graphite substrate yeSemiconductorizinhlelo zokusebenza zikhiqiza ingxenye enobumsulwa obuphakeme nokumelana nomkhathi we-oxidizing.
    I-CVD SiC noma i-CVI SiC isetshenziswa kuGraphite yezingxenye zokuklama ezilula noma eziyinkimbinkimbi. Ukumboza kungasetshenziswa ngobukhulu obuhlukahlukene kanye nezingxenye ezinkulu kakhulu.

    I-SiC coating/coated MOCVD Susceptor

    Izici:
    · I-Thermal Shock Resistance enhle kakhulu
    · Ukumelana Nokushaqeka Okuhle Kakhulu Komzimba
    · Excellent Chemical Resistance
    · Super High Purity
    · Ukutholakala kokuthi I-Complex Shape
    · Isebenziseka ngaphansi kwe-Oxidizing Atmosphere

     

    Izici Ezijwayelekile Ze-Base Graphite Material:

    Ukuminyana Okubonakalayo: 1.85 g/cm3
    Ukungazweli Kagesi: 11 μΩm
    I-Flexural Strenth: 49 MPa (500kgf/cm2)
    Ukuqina Kwasogwini: 58
    Umlotha: <5ppm
    I-Thermal Conductivity: 116 W/mK (100 kcal/mhr-℃)

    I-SiC coating/coated MOCVD SusceptorI-SiC coating/coated MOCVD SusceptorI-SiC coating/coated MOCVD SusceptorI-SiC coating/coated MOCVD Susceptor

    Imikhiqizo eminingi

    I-SiC coating/coated MOCVD Susceptor

    Ulwazi Lwenkampani

    111

    Imishini Yezimboni

    222

    Inqolobane

    333

    Izitifiketi

    Izitifiketi22

    ama-faq

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