Sineqembu lethu lokuthengisa, ithimba lokuklama, ithimba lezobuchwepheshe, iqembu le-QC nethimba lephakheji. Sinezinqubo eziqinile zokulawula ikhwalithi zenqubo ngayinye. Futhi, zonke izisebenzi zethu zinolwazi emkhakheni wokunyathelisa wentengo ecashuniwe ye-China High Temperature Resistance Green Silicon Carbide Abrasive Powder Black Silicon Carbide polishing Powder, ukuhlomula kwamakhasimende nokwaneliseka ngokuvamile kuyinhloso yethu enkulu. Khumbula ukuxhumana nathi. Sinikeze amathuba, sikunikeze isimanga.
Sineqembu lethu lokuthengisa, ithimba lokuklama, ithimba lezobuchwepheshe, iqembu le-QC nethimba lephakheji. Sinezinqubo eziqinile zokulawula ikhwalithi zenqubo ngayinye. Futhi, zonke izisebenzi zethu zinolwazi emkhakheni wokunyathelisa weI-China Silicon Carbide, Sic, Ithini intengo enhle? Sinikeza amakhasimende ngentengo yefekthri. Esimweni sekhwalithi enhle, ukusebenza kahle kufanele kunakwe futhi kugcinwe inzuzo efanele ephansi nenempilo. Kuyini ukulethwa okusheshayo? Senza ukulethwa ngokwezidingo zamakhasimende. Nakuba isikhathi sokulethwa sincike enanini le-oda kanye nokuba yinkimbinkimbi kwalo, sisazama ukuhlinzeka ngemikhiqizo nezisombululo ngesikhathi. Ngethemba ukuthi singaba nobudlelwano bebhizinisi besikhathi eside.
Incazelo Yomkhiqizo
Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC.
Izici eziyinhloko:
1. Ukumelana nokushisa okuphezulu kwe-oxidation: ukumelana ne-oxidation kusekuhle kakhulu uma izinga lokushisa liphezulu njengo-1600 C.
2. Ukuhlanzeka okuphezulu : okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating
Izakhiwo ze-SiC-CVD | ||
Isakhiwo Sekristalu | I-FCC β isigaba | |
Ukuminyana | g/cm³ | 3.21 |
Ukuqina | Vickers ubulukhuni | 2500 |
Usayizi Wokusanhlamvu | μm | 2~10 |
I-Chemical Purity | % | 99.99995 |
Amandla Okushisa | J·kg-1 ·K-1 | 640 |
I-Sublimation Temperature | ℃ | 2700 |
Amandla E-Felexural | I-MPa (RT 4-point) | 415 |
I-Young's Modulus | I-Gpa (4pt bend, 1300℃) | 430 |
I-Thermal Expansion (CTE) | 10-6K-1 | 4.5 |
I-Thermal conductivity | (W/mK) | 300 |