I-PSS Etch Carrier

Incazelo emfushane:


  • Indawo Yomsuka:China
  • Isakhiwo Sekristalu:Isigaba se-FCCβ
  • Ukuminyana :3.21 g/cm;
  • Ukuqina :2500 Vickers;
  • Usayizi Wokusanhlamvu:2~10μm;
  • I-Chemical Purity:99.99995%;
  • Amandla Okushisa:640J·kg-1·K-1;
  • I-Sublimation Temperature:2700 ℃;
  • Amandla E-Felexural:415 Mpa (RT 4-Point);
  • I-Young's Modulus:430 Gpa (4pt bend, 1300℃);
  • Ukunwetshwa kwe-Thermal (CTE):4.5 10-6K-1;
  • I-Thermal Conductivity:300 (W/MK);
  • Imininingwane Yomkhiqizo

    Omaka bomkhiqizo

    Incazelo Yomkhiqizo

    Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC.

    Izici eziyinhloko:

    1. Ukumelana nokushisa okuphezulu kwe-oxidation:

    ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.

    2. Ukuhlanzeka okuphezulu : okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

    3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

    4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

    Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating

    Izakhiwo ze-SiC-CVD

    Isakhiwo Sekristalu I-FCC β isigaba
    Ukuminyana g/cm³ 3.21
    Ukuqina Vickers ubulukhuni 2500
    Usayizi Wokusanhlamvu μm 2~10
    I-Chemical Purity % 99.99995
    Amandla Okushisa J·kg-1 ·K-1 640
    I-Sublimation Temperature 2700
    Amandla E-Felexural I-MPa (RT 4-point) 415
    I-Young's Modulus I-Gpa (4pt bend, 1300℃) 430
    I-Thermal Expansion (CTE) 10-6K-1 4.5
    I-Thermal conductivity (W/mK) 300

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