Okuhlangenwe nakho kokuphatha amaphrojekthi acebe ngendlela emangalisayo nomuntu oyimodeli yesevisi eyodwa kwenza ukubaluleka okukhulu kokuxhumana kwenhlangano kanye nokuqonda kwethu kalula lokho okulindele ku-Professional China China Sic Boat Carry Silicon Wafers Into The High Temperature Diffusion Coating Furnace Tube, Umgomo wethu omkhulu uhlala njalo. ukukleliswa njengophawu oluphezulu kanye nokuhola njengephayona emkhakheni wethu. Siyaqiniseka ukuthi ukuzizwisa kwethu okukhiqizayo ekudaleni amathuluzi kuzothola ukwethenjwa yikhasimende, Sifisa ukubambisana nokwenza ndawonye isikhathi eside esingcono nakakhulu nawe!
Okuhlangenwe nakho kokuphatha amaphrojekthi acebe ngendlela emangalisayo kanye nemodeli yomuntu yesevisi eyodwa kwenza kubaluleke kakhulu ukuxhumana kwenhlangano kanye nokuqonda kwethu kalula lokho okulindeleI-China Phatha ama-Silicon Wafers, I-Polycrystallie Silicon Wafer, Yamukela noma yimiphi imibuzo yakho kanye nokukukhathazayo ngemikhiqizo yethu. Sibheke ngabomvu ukusungula ubudlelwano bebhizinisi besikhathi eside nawe maduze nje. Xhumana nathi namuhla. Singabalingani bokuqala bebhizinisi ukuhambisana nezidingo zakho!
UmkhiqizoDukubhaliswa
I-Silicon carbide Wafer Boat isetshenziswa kabanzi njengesibambi esilucwecwana kwinqubo yokusabalalisa izinga lokushisa eliphezulu.
Izinzuzo:
Ukumelana nezinga lokushisa eliphezulu:ukusetshenziswa okuvamile ku-1800 ℃
High conductivity ezishisayo:elilingana ne-graphite material
Ukuqina okuphezulu:ubulukhuni okwesibili ngemuva kwedayimane, i-boron nitride
Ukumelana nokugqwala:i-asidi eqinile ne-alkali ayinayo ukugqwala kuyo, ukumelana nokugqwala kungcono kune-tungsten carbide ne-alumina.
Isisindo esincane:ukuminyana okuphansi, eduze ne-aluminium
Akukho deformation: i-coefficient ephansi yokwandisa okushisayo
Ukumelana nokushaqeka okushisayo:ingamelana nokushintsha kwezinga lokushisa okubukhali, imelane nokushaqeka kokushisa, futhi ibe nokusebenza okuzinzile
Izakhiwo Zomzimba ze-SiC
| Impahla | Inani | Indlela |
| Ukuminyana | 3.21 g/cc | Sink-float kanye nobukhulu |
| Ukushisa okuqondile | 0.66 J/g °K | I-Pulsed laser flash |
| Amandla e-Flexural | 450 MPa560 MPa | 4 iphuzu ukugoba, RT4 iphuzu ukugoba, 1300° |
| Ukuqina kokuphuka | 2.94 MPa m1/2 | I-Microindentation |
| Ukuqina | 2800 | Vicker, 500g umthwalo |
| I-Elastic ModulusYoung's Modulus | 450 GPA430 GPA | 4 pt ukugoba, RT4 pt ukugoba, 1300 °C |
| Usayizi wokusanhlamvu | 2 - 10 µm | I-SEM |
Izakhiwo ezishisayo ze-SiC
| I-Thermal Conductivity | 250 W/m °K | Indlela ye-Laser flash, RT |
| I-Thermal Expansion (CTE) | 4.5 x 10-6 °K | Izinga lokushisa legumbi liye ku-950 °C, i-silica dilatometer |
