Futhi sigxile ekuthuthukiseni izinto zokuphatha kanye nohlelo lwe-QC ukuze sikwazi ukugcina inzuzo enhle ngaphakathi kwebhizinisi eliqhudelana kakhulu lemikhiqizo Eyenziwe Ngamuntu I-China Silicon Carbon Crucible for Ferrous and Non-Ferrous Alloys, Ukuthola inzuzo engaguquki, enenzuzo, futhi engaguquki. ukuthuthuka ngokuthola inzuzo yokuncintisana, futhi ngokuqhubekayo nokwandisa intengo engezwe kubaninimasheya bethu kanye nabasebenzi bethu.
Futhi sigxile ekuthuthukiseni ukuphathwa kwezinto kanye nohlelo lwe-QC ukuze sikwazi ukugcina inzuzo enhle ngaphakathi kwebhizinisi eliqhudelana kakhuluI-China Silica Graphite Crucible, I-Graphite Foundry Crucible, Inkampani yethu ingumnikezeli wamazwe ngamazwe ngalolu hlobo lokuthengiswayo. Sinikezela ngokukhethwa okumangalisayo kokuthengiswayo kwekhwalithi ephezulu. Umgomo wethu uwukujabulisa wena ngeqoqo lethu elihlukile lezinto ezinengqondo ngenkathi sinikeza inani kanye nesevisi enhle kakhulu. Umgomo wethu ulula: Ukuhlinzeka ngezinto ezihamba phambili kanye nesevisi kumakhasimende ethu ngamanani aphansi kakhulu ngangokunokwenzeka.
Izinhlanganisela zekhabhoni / ikhabhoni(okuzobizwa kamuva ngokuthi “C / C noma CFC”) iwuhlobo lwento eyinhlanganisela esekelwe kukhabhoni futhi iqiniswe yi-carbon fibre kanye nemikhiqizo yayo (i-carbon fibre preform). Inakho kokubili inertia ye-carbon namandla aphezulu e-carbon fiber. Inezici ezinhle zokusebenzisa imishini, ukumelana nokushisa, ukumelana nokugqwala, i-friction damping kanye nezici ze-thermal kanye ne-electrical conductivity.
I-CVD-SiCukugqoka kunezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana ne-oxidation, ukuhlanzeka okuphezulu, ukumelana ne-asidi & alkali kanye ne-reagent ye-organic, enezakhiwo ezinzile ngokomzimba namakhemikhali.
Uma kuqhathaniswa ne-high-purity graphite materials, i-graphite iqala ukufaka i-oxidize ku-400C, okuzobangela ukulahlekelwa kwempushana ngenxa ye-oxidation, okuholela ekungcoleni kwemvelo kumadivayisi we-peripheral kanye nama-vacuum chamber, futhi kwandise ukungcola kwemvelo ehlanzekile.
Kodwa-ke, ukufakwa kwe-SiC kungagcina ukuzinza ngokomzimba namakhemikhali kumadigri ayi-1600, Kusetshenziswa kabanzi embonini yesimanje, ikakhulukazi embonini ye-semiconductor.
Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC. I-SIC eyakhiwe ihlanganiswe ngokuqinile nesisekelo se-graphite, inikeze isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite compact, i-Porosity-free, ukumelana nokushisa okuphezulu, ukumelana nokugqwala kanye nokumelana ne-oxidation.
Izici eziyinhloko:
1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.
2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:
| I-SiC-CVD | ||
| Ukuminyana | (g/cc)
| 3.21 |
| Amandla e-Flexural | (Mpa)
| 470 |
| Ukunwetshwa kwe-thermal | (10-6/K) | 4
|
| I-Thermal conductivity | (W/mK) | 300
|
