Kungani ama-sidewalls egoba ngesikhathi sokufakwa okomile?

Ukungafani kwe-ion bombardment

Yomileetchingngokuvamile inqubo ehlanganisa imiphumela engokomzimba kanye namakhemikhali, lapho ukuqhuma kwe-ion kuyindlela ebalulekile yokuqopha ngokomzimba. Ngesikhathi se-inqubo etching, i-engeli yesigameko kanye nokusatshalaliswa kwamandla kwama-ion kungase kungalingani.

Uma i-engeli yesigameko se-ion ihlukile ezindaweni ezihlukene kudonga oluseceleni, umthelela wokushumeka wama-ion eceleni kodonga nawo uzohluka. Ezindaweni ezinama-engeli esigameko esikhulu se-ion, umthelela wokushumeka wama-ion ohlangothini oluseceleni unamandla, okuzokwenza ukuthi udonga oluseceleni kule ndawo lugxishwe kakhulu, okubangele ukugoba kodonga. Ngaphezu kwalokho, ukusatshalaliswa okungalingani kwamandla e-ion nakho kuzoveza imiphumela efanayo. Ama-ion anamandla aphezulu angasusa izinto ngokuphumelelayo, okuholela ekungaguqukietchingamadigri odonga oluseceleni ezindaweni ezihlukene, okubuye kubangele ukuthi udonga oluseceleni lugobe.

Umthelela we-photoresist

I-Photoresist idlala indima ye-mask ku-etching eyomile, ivikela izindawo ezingadingi ukuqoshwa. Kodwa-ke, i-photoresist nayo ithintwa ukuqhuma kwe-plasma kanye nokusabela kwamakhemikhali phakathi nenqubo yokufaka, futhi ukusebenza kwayo kungase kushintshe.

Uma ubukhulu be-photoresist bungalingani, izinga lokusetshenziswa ngesikhathi senqubo yokunamathisela alihambisani, noma ukunamathela phakathi kwe-photoresist ne-substrate kuhlukile ezindaweni ezihlukene, kungase kuholele ekuvikelekeni okungalingani kwezindonga ezisemaceleni phakathi nenqubo yokunamathisela. Isibonelo, izindawo ezine-photoresist ezacile noma ezinamathelayo ezibuthakathaka zingenza into engaphansi iqoshwe kalula, okubangele ukuthi izindonga ezisemaceleni zigobe kulezi zindawo.

Umehluko wezakhiwo ze-substrate

I-substrate ehlanganisiwe ngokwayo ingaba nezakhiwo ezihlukile, njengokuma kwekristalu okuhlukile nokugxila kwe-doping ezifundeni ezihlukene. Lo mehluko uzothinta izinga lokuqopha kanye nokukhetha okucuphayo.
Isibonelo, ku-silicon ye-crystalline, ukuhlelwa kwama-athomu e-silicon emugqeni ohlukile wekristalu kuhlukile, futhi ukusebenza kwawo kabusha kanye nezinga lokunamathisela negesi etching nakho kuzohluka. Ngesikhathi senqubo yokuqopha, amanani ahlukene okunamathisela abangelwa umehluko wezakhiwo ezibonakalayo azokwenza ukujula kwezindonga eziseceleni kungahambisani, ekugcineni kuholele ekugobeni kwezindonga eziseceleni.

Izinto ezihlobene nezisetshenziswa

Ukusebenza kanye nesimo semishini yokuqopha nakho kunomthelela obalulekile emiphumeleni yokuqopha. Isibonelo, izinkinga ezifana nokusatshalaliswa kwe-plasma ngokungalingani egumbini lokusabela kanye nokugqoka kwama-electrode okungalingani kungase kuholele ekusabalaliseni okungalingani kwamapharamitha njengokuminyana kwe-ion namandla endaweni eyi-wafer ngesikhathi sokucwiliswa.

Ngaphezu kwalokho, ukulawulwa kwezinga lokushisa okungalingani kwezinto zokusebenza kanye nokuguquguquka okuncane kokugeleza kwegesi kungase futhi kuthinte ukufana kwe-etching, okuholela ekugobeni kwe-sidewall.