Iyini i-sic coating? – I-VET ENERGY

I-Silicon Carbideiyinhlanganisela eqinile equkethe i-silicon ne-carbon, futhi itholakala emvelweni njenge-mineral moissanite engavamile kakhulu. Izinhlayiya ze-silicon carbide zingahlanganiswa ndawonye ngokucwilisa ukuze zenze izitsha zobumba eziqine kakhulu, ezisetshenziswa kabanzi ezinhlelweni ezidinga ukuqina okuphezulu, ikakhulukazi kudwendwe lwe-semiconductor.

Isakhiwo somzimba se-SiC

Iyini i-SiC Coating?

I-SiC coating iwugqinsi, ukumelana ne-silicon carbide enamathelayo enokugqwala okuphezulu nokumelana nokushisa kanye nokuhamba kahle kwe-thermal. Lokhu kucwebezela okuphezulu kwe-SiC kusetshenziswa ikakhulukazi ezimbonini ze-semiconductor neze-elekthronikhi ukuze kuvikelwe abathwali be-wafer, izisekelo nezinto zokushisisa ezindaweni ezibolayo nezisebenzayo. I-SiC coating ibuye ifanelekele izithando zomlilo kanye nokufudumeza kwesampula ku-vacuum ephezulu, indawo esebenzayo ne-oxygen.

Ukuhlanzeka okuphezulu kwe-SiC enamathela endaweni

Iyini inqubo yokuhlanganisa i-SiC?

Ungqimba oluncane lwe-silicon carbide lufakwa phezu kwe-substrate kusetshenziswaI-CVD (Chemical Vapor Deposition). I-deposition ivame ukwenziwa emazingeni okushisa ka-1200-1300 ° C futhi ukuziphatha okushisayo okukhulayo kwe-substrate impahla kufanele kuhambisane ne-SiC coating ukuze kuncishiswe ukucindezeleka okushisayo.

I-CVD SIC Coating FILM CRYSTAL STRUCTURE

Izakhiwo ezingokomzimba ze-SiC coating zibonakala ikakhulukazi emazingeni aphezulu okushisa, ukuqina, ukumelana nokugqwala kanye nokuhamba kokushisa.

Amapharamitha ajwayelekile angokomzimba ngokuvamile ami kanje:

Ukuqina: I-SiC coating ngokuvamile ine-Vickers Hardness ebangeni elingu-2000-2500 HV, okubanikeza ukuguga okuphezulu kakhulu kanye nokumelana nomthelela ezinhlelweni zokusebenza zezimboni.

Ukuminyana: Izembatho ze-SiC ngokuvamile ziba nokuminyana okungu-3.1-3.2 g/cm³. Ukuminyana okuphezulu kunomthelela emandleni emishini kanye nokuqina kwe-coating.

I-Thermal conductivity: Izingubo ze-SiC zine-conductivity ephezulu yokushisa, ngokuvamile ebangeni le-120-200 W / mK (ku-20 ° C). Lokhu kuyinikeza ukuhanjiswa okuhle kwe-thermal ezindaweni zokushisa okuphezulu futhi kuyenza ifaneleke kakhulu imishini yokwelapha ukushisa embonini ye-semiconductor.

Iphoyinti lokuncibilika: I-silicon carbide inendawo yokuncibilika ecishe ibe ngu-2730°C futhi inokuzinza okuhle kakhulu kokushisa emazingeni okushisa adlulele.

I-Coefficient of Thermal Expansion: Izigqoko ze-SiC zine-coefficient ephansi yomugqa yokunwetshwa kwe-thermal (CTE), ngokuvamile ebangeni elingu-4.0-4.5 µm/mK (ku-25-1000℃). Lokhu kusho ukuthi ukuzinza kwayo kwe-dimensional kuhle kakhulu kunomehluko omkhulu wezinga lokushisa.

Ukumelana nokugqwala: Izindwangu ze-SiC zimelana kakhulu nokugqwala ezindaweni ezine-asidi eqinile, i-alkali ne-oxidizing, ikakhulukazi uma kusetshenziswa ama-asidi aqinile (afana ne-HF noma i-HCl), ukumelana nokugqwala kwawo kudlula kude lokho kwezinto zensimbi ezivamile.

I-SiC coatings ingasetshenziswa ezintweni ezilandelayo:

Ukuhlanzeka okuphezulu kwe-isostatic graphite (i-CTE ephansi)
I-Tungsten
I-Molybdenum
I-Silicon Carbide
I-Silicon Nitride
I-Carbon-Carbon Composites (CFC)

Imikhiqizo ehlanganisiwe ye-SiC ivame ukusetshenziswa kulezi zindawo ezilandelayo:

Ukukhiqizwa kwe-chip ye-LED
Ukukhiqizwa kwe-polysilicon
I-semiconductorukukhula kwekristalu
Silicon kanyeI-SiC epitaxy
Ukwelashwa kokushisa kwe-wafer kanye nokufakwa

Kungani ukhethe i-VET Energy?

I-VET Energy ingumkhiqizi oholayo, umsunguli kanye nomholi wemikhiqizo yokuhlanganisa ye-SiC e-China, imikhiqizo eyinhloko yokuhlanganisa ye-SiC ihlanganisaI-wafer carrier ene-SiC coating, SiC camerai-epitaxial susceptor, I-SiC eboshwe indandatho yegraphite, Izingxenye zenyanga ene-SiC coating, I-SiC ehlanganiswe ne-carbon-carbon composite, I-SiC coated wafer isikebhe, I-heater ehlanganisiwe ye-SiC, njll. I-VET Energy izibophezele ekuhlinzekeni imboni ye-semiconductor ngobuchwepheshe bokugcina nezixazululo zemikhiqizo, futhi isekela izinsizakalo zokwenza ngokwezifiso. Sibheke ngabomvu ukuba uzakwethu wesikhathi eside e-China.

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