Isithando somlilo sekristalu siyisisetshenziswa esibalulekilei-silicon carbideukukhula kwekristalu. Ifana nesithando somlilo esivamile se-crystalline silicon grade crystal growth. Isakhiwo sesithando somlilo asiyinkimbinkimbi kakhulu. Ikakhulukazi yakhiwe umzimba wesithando somlilo, isistimu yokushisisa, indlela yokudlulisa ikhoyili, isistimu yokutholwa kwevacuum kanye nesilinganiso, isistimu yendlela yegesi, isistimu yokupholisa, isistimu yokulawula, njll. Inkambu yokushisa kanye nezimo zenqubo zinquma izinkomba ezibalulekilei-silicon carbide crystalnjengekhwalithi, ubukhulu, ukuqhutshwa njalo njalo.
Ngakolunye uhlangothi, izinga lokushisa ngesikhathi sokukhula kwei-silicon carbide crystaliphezulu kakhulu futhi ayikwazi ukugadwa. Ngakho-ke, ubunzima obukhulu bulele enqubweni ngokwayo. Ubunzima obukhulu bumi kanje:
(1) Ubunzima ekulawuleni insimu eshisayo: Ukuqapha indawo evaliwe yokushisa okuphezulu kunzima futhi akulawuleki. Ihlukile kumishini yokukhula yekristalu esekelwe ku-silicon yendabuko enezinga eliphezulu lokuzishintshanisa nenqubo yokukhula kwekristalu ebonakalayo futhi elawulekayo, amakristalu e-silicon carbide akhula endaweni evaliwe endaweni enezinga lokushisa eliphezulu ngaphezu kuka-2,000 ℃, kanye nezinga lokushisa lokukhula. idinga ukulawulwa ngokunembile ngesikhathi sokukhiqiza, okwenza ukulawula izinga lokushisa kube nzima;
(2) Ubunzima bokulawula ifomu le-crystal: ama-micropipes, i-polymorphic inclusions, ukuchithwa kanye nezinye iziphambeko zivame ukwenzeka phakathi nenqubo yokukhula, futhi ziyathinta futhi ziguquke. Amapayipi amancane (MP) ayiziphambeko zohlobo oluthile ezinosayizi wama-microns ambalwa kuya kumashumi ama-microns, okungamaphutha abulalayo emishini. I-silicon carbide crystals eyodwa ihlanganisa amafomu angaphezu kwama-200 e-crystal ahlukene, kodwa izakhiwo ze-crystal ezimbalwa kuphela (uhlobo lwe-4H) ziyizinto ze-semiconductor ezidingekayo ekukhiqizeni. Ukuguqulwa kwefomu le-Crystal kulula ukwenzeka phakathi nenqubo yokukhula, okuholela kumaphutha okufakwa kwe-polymorphic. Ngakho-ke, kuyadingeka ukulawula ngokunembile imingcele efana ne-silicon-carbon ratio, izinga lokushisa lokukhula, izinga lokukhula kwekristalu, nokucindezela kokugeleza komoya. Ngaphezu kwalokho, kukhona i-gradient yokushisa emkhakheni oshisayo we-silicon carbide ukukhula kwekristalu eyodwa, okuholela ekucindezelekeni kwangaphakathi kwangaphakathi kanye nokuhlukana okubangelwayo (i-basal plane dislocation BPD, i-screw dislocation TSD, i-edge dislocation TED) ngesikhathi senqubo yokukhula kwekristalu, ngaleyo ndlela. okuthinta ikhwalithi nokusebenza kwe-epitaxy namadivayisi alandelayo.
(3) Ukulawulwa kwe-doping okunzima: Ukwethulwa kokungcola kwangaphandle kufanele kulawulwe ngokuqinile ukuze kutholakale i-crystal conductive ene-doping eqondisayo;
(4) Izinga lokukhula kancane: Izinga lokukhula kwe-silicon carbide lihamba kancane kakhulu. Izinto ze-silicon zendabuko zidinga kuphela izinsuku ezi-3 ukuze zikhule zibe i-crystal rod, kuyilapho izinduku ze-silicon carbide crystal zidinga izinsuku ezingu-7. Lokhu kuholela ekusebenzeni okuphansi ngokwemvelo kokukhiqiza kwe-silicon carbide kanye nokukhishwa okulinganiselwe kakhulu.
Ngakolunye uhlangothi, imingcele yokukhula kwe-silicon carbide epitaxial idinga kakhulu, okuhlanganisa ukuqina komoya kwemishini, ukuzinza kwengcindezi yegesi egumbini lokuphendula, ukulawulwa okunembile kwesikhathi sokwethulwa kwegesi, ukunemba kwegesi. isilinganiso, kanye nokuphathwa okuqinile kwezinga lokushisa lokubeka. Ikakhulukazi, ngokuthuthukiswa kwezinga lokumelana ne-voltage yedivayisi, ubunzima bokulawula imingcele eyinhloko ye-epitaxial wafer bukhule kakhulu. Ukwengeza, ngokunyuka kokuqina kongqimba lwe-epitaxial, indlela yokulawula ukufana kwe-resistivity futhi unciphise ukuminyana kwesici ngenkathi uqinisekisa ukuthi ukushuba sekube enye inselele enkulu. Kuhlelo lokulawula olufakwe ugesi, kuyadingeka ukuhlanganisa izinzwa ezinemba kakhulu nama-actuator ukuze kuqinisekiswe ukuthi imingcele ehlukahlukene ingalawulwa ngokunembile nangokuzinzile. Ngasikhathi sinye, ukwenziwa kahle kwe-algorithm yokulawula nakho kubalulekile. Kudingeka ikwazi ukulungisa isu lokulawula ngesikhathi sangempela ngokuvumelana nesignali yempendulo ukuze ivumelane nezinguquko ezihlukahlukene kunqubo yokukhula kwe-silicon carbide epitaxial.
Ubunzima obukhulu kui-silicon carbide substrateukukhiqiza:
Isikhathi sokuthumela: Jun-07-2024