Isizukulwane sokuqala sezinto zokwakha ze-semiconductor simelelwa yi-silicon yendabuko (Si) ne-germanium (Ge), okuyisisekelo sokukhiqiza isifunda esihlanganisiwe. Asetshenziswa kakhulu kuma-low-voltage, low-frequency, kanye nama-low-power transistors nama-detectors. Ngaphezu kwe-90% yemikhiqizo ye-semiconductor Yenziwe ngezinto ezisekelwe ku-silicon;
Izinto ze-semiconductor zesizukulwane sesibili zimelelwa yi-gallium arsenide (GaAs), i-indium phosphide (InP) ne-gallium phosphide (GaP). Uma kuqhathaniswa namadivayisi asekelwe ku-silicon, anezakhiwo ze-optoelectronic ze-high-frequency kanye nesivinini esikhulu futhi asetshenziswa kabanzi emkhakheni we-optoelectronics kanye ne-microelectronics. ;
Isizukulwane sesithathu sezinto zokwakha ze-semiconductor simelelwa izinto ezivelayo ezifana ne-silicon carbide (SiC), i-gallium nitride (GaN), i-zinc oxide (ZnO), idayimane (C), ne-aluminium nitride (AlN).
I-silicon carbideiyinto ebalulekile eyisisekelo ekuthuthukisweni kwemboni ye-semiconductor yesizukulwane sesithathu. Imishini yamandla kagesi ye-silicon carbide ingahlangabezana ngokuphumelelayo nokusebenza kahle okuphezulu, i-miniaturization kanye nezidingo ezingasindi zezinhlelo ze-elekthronikhi zamandla ngokumelana kwazo okuphezulu kwe-voltage, ukumelana nokushisa okuphezulu, ukulahlekelwa okuphansi nezinye izakhiwo.
Ngenxa yezakhiwo zayo eziphakeme ezingokomzimba: igebe lebhande eliphezulu (elihambisana nenkundla kagesi ewohlokayo kanye nokuminyana kwamandla aphezulu), ukuqhutshwa kukagesi okuphezulu, kanye nokushisa okuphezulu, kulindeleke ukuthi kube yizinto eziyisisekelo ezisetshenziswa kakhulu ekwenzeni ama-semiconductor chips esikhathini esizayo. . Ikakhulukazi emikhakheni yezimoto zamandla amasha, ukukhiqizwa kwamandla e-photovoltaic, ukuhamba ngesitimela, amagridi ahlakaniphile kanye neminye imikhakha, kunezinzuzo ezisobala.
Inqubo yokukhiqiza ye-SiC ihlukaniswe ngezinyathelo ezintathu ezinkulu: ukukhula kwekristalu eyodwa ye-SiC, ukukhula kongqimba lwe-epitaxial kanye nokukhiqizwa kwedivayisi, okuhambisana nezixhumanisi ezine ezinkulu zochungechunge lwezimboni:i-substrate, i-epitaxy, amadivayisi namamojula.
Indlela evamile yokukhiqiza ama-substrate angaphansi kuqala isebenzisa indlela yokunciphisa umhwamuko obonakalayo ukuze inciphise impushana endaweni yokukhipha umoya enezinga lokushisa eliphezulu, futhi ikhulise amakristalu e-silicon carbide ebusweni bekristalu yembewu ngokulawula inkambu yokushisa. Kusetshenziswa i-silicon carbide wafer njenge-substrate, i-chemical vapor deposition isetshenziselwa ukufaka ungqimba lwekristalu eyodwa ku-wafer ukuze kwakheke i-epitaxial wafer. Phakathi kwazo, ukukhulisa ungqimba lwe-silicon carbide epitaxial ku-conductive silicon carbide substrate kungenziwa kumadivayisi kagesi, asetshenziswa kakhulu ezimotweni zikagesi, ama-photovoltaics nezinye izinkambu; ukukhulisa ungqimba lwe-gallium nitride epitaxial ku-semi-insulatingi-silicon carbide substrateingenziwa futhi ibe amadivaysi efrikhwensi yomsakazo, asetshenziswa kwezokuxhumana kwe-5G nakweminye imikhakha.
Okwamanje, ama-silicon carbide substrates anezithiyo zobuchwepheshe eziphakeme kakhulu ochungechungeni lwezimboni ze-silicon carbide, futhi ama-silicon carbide substrates anzima kakhulu ukukhiqiza.
Ibhodlela lokukhiqiza le-SiC alizange lixazululwe ngokuphelele, futhi ikhwalithi yezinsika ze-crystal impahla eluhlaza ayizinzile futhi kunenkinga yokukhiqiza, okuholela ezindlekweni eziphezulu zamadivayisi we-SiC. Kuthatha kuphela isilinganiso sezinsuku ezi-3 ukuthi impahla ye-silicon ikhule ibe induku yekristalu, kodwa kuthatha isonto ukuze kube ne-silicon carbide crystal rod. I-silicon crystal rod evamile ingakhula ngo-200cm ubude, kodwa i-silicon carbide crystal rod ingakhula ngo-2cm ubude. Ngaphezu kwalokho, i-SiC ngokwayo iyimpahla eqinile futhi ephukayo, futhi ama-wafers enziwe ngayo athambekele ekuchopheni uma kusetshenziswa ukudayela kwe-wafer okusika ngomshini, okuthinta ukuvunwa nokuthembeka komkhiqizo. Ama-substrates e-SiC ahluke kakhulu kuma-silicon ingots, futhi yonke into kusukela kumishini, izinqubo, ukucubungula kuya ekusikeni kudinga ukuthuthukiswa ukuze kuphathe i-silicon carbide.
Iketanga lemboni ye-silicon carbide lihlukaniswe ikakhulukazi izixhumanisi ezine ezinkulu: i-substrate, i-epitaxy, amadivaysi kanye nezicelo. Izinto ezisetshenziswa yi-substrate ziyisisekelo sochungechunge lwemboni, izinto ze-epitaxial ziwukhiye wokwenziwa kwemishini, izisetshenziswa ziwumgogodla wochungechunge lwemboni, futhi ukusetshenziswa kungamandla aqhuba ukuthuthukiswa kwezimboni. Imboni ekhuphuka nomfula isebenzisa izinto ezingavuthiwe ukwenza izinto ze-substrate ngokusebenzisa izindlela zokunciphisa umhwamuko obonakalayo nezinye izindlela, bese isebenzisa izindlela zokubeka umhwamuko wamakhemikhali nezinye izindlela zokukhulisa izinto ze-epitaxial. Imboni ephakathi nendawo isebenzisa izinto ezisetshenziswa phezulu ukuze yenze amadivaysi efrikhwensi yomsakazo, izisetshenziswa zamandla nezinye izinto, ezisetshenziswa ekugcineni kwezokuxhumana ze-5G ezansi nomfula. , izimoto zikagesi, izitimela zesitimela, njll. Phakathi kwazo, i-substrate ne-epitaxy i-akhawunti ye-60% yezindleko zochungechunge lwemboni futhi iyinani eliyinhloko lochungechunge lwemboni.
I-substrate ye-SiC: Amakristalu e-SiC ngokuvamile akhiqizwa kusetshenziswa indlela ye-Lely. Imikhiqizo yamazwe ngamazwe ejwayelekile iyashintsha ukusuka kumayintshi angu-4 ukuya kwangu-6 amayintshi, futhi imikhiqizo engaphansi engu-8-inch conductive substrate iye yathuthukiswa. Ama-substrates asekhaya ngokuyinhloko angamayintshi angu-4. Njengoba imigqa yokukhiqiza ye-silicon wafer ekhona engama-intshi angu-6 ingathuthukiswa futhi iguqulwe ukuze ikhiqize amadivayisi e-SiC, isabelo semakethe esiphezulu sama-substrates angu-6-intshi e-SiC sizogcinwa isikhathi eside.
Inqubo ye-silicon carbide substrate iyinkimbinkimbi futhi inzima ukuyikhiqiza. I-Silicon carbide substrate iyi-compound semiconductor single crystal material eyakhiwe ngezinto ezimbili: ikhabhoni ne-silicon. Njengamanje, imboni ikakhulukazi isebenzisa i-high-purity carbon powder kanye ne-high-purity silicon powder njengezinto zokusetshenziswa ukuze kuhlanganiswe i-silicon carbide powder. Ngaphansi kwenkambu yokushisa ekhethekile, indlela yokudlulisa umhwamuko ovuthiwe (indlela ye-PVT) isetshenziselwa ukukhulisa i-silicon carbide yosayizi abahlukene esithandweni sokukhulisa ikristalu. I-crystal ingot ekugcineni iyacutshungulwa, isikwe, igaywe, ipholishwe, ihlanzwe nezinye izinqubo eziningi ukuze kukhiqizwe i-silicon carbide substrate.
Isikhathi sokuthumela: May-22-2024