Imizuzu emithathu yokufunda nge-silicon carbide (SIC)

Isingeniso seI-Silicon Carbide

I-Silicon carbide (SIC) inokuminyana okungu-3.2g/cm3. I-silicon carbide yemvelo iyivelakancane kakhulu futhi ikakhulukazi ihlanganiswa ngendlela yokwenziwa. Ngokwezigaba ezahlukene ze-crystal structure, i-silicon carbide ingahlukaniswa izigaba ezimbili: i-α SiC ne-β SiC. I-semiconductor yesizukulwane sesithathu emelwe i-silicon carbide (SIC) ine-frequency ephezulu, ukusebenza kahle okuphezulu, amandla aphezulu, ukumelana nokucindezela okukhulu, ukumelana nokushisa okuphezulu kanye nokumelana nokushisa okuqinile. Ilungele izidingo zamasu ezinkulu zokongiwa kwamandla kanye nokunciphisa ukungcola, ukukhiqiza okuhlakaniphile kanye nokuphepha kolwazi. Iwukweseka ukuqamba okusha okuzimele kanye nentuthuko kanye noguquko lokuxhumana kwesizukulwane esisha seselula, izimoto ezintsha zamandla, izitimela zesitimela ezihamba ngesivinini esikhulu, i-inthanethi yamandla nezinye izimboni Izinto ezithuthukisiwe eziwumgogodla kanye nezingxenye ze-elekthronikhi sekugxilwe kuzona kobuchwepheshe be-semiconductor kanye nokuncintisana kwezimboni. . Ngo-2020, iphethini yezomnotho nezohwebo emhlabeni wonke isesikhathini sokulungiswa kabusha, futhi isimo sangaphakathi nesangaphandle somnotho waseShayina siyinkimbinkimbi futhi sinzima, kodwa imboni yesizukulwane sesithathu ye-semiconductor emhlabeni ikhula ngokumelene nalo mkhuba. Kudingeka kuqashelwe ukuthi imboni ye-silicon carbide isingene esigabeni esisha sokuthuthuka.

I-silicon carbideisicelo

Isicelo se-silicon carbide embonini ye-semiconductor i-silicon carbide semiconductor industry chain ikakhulukazi ihlanganisa i-silicon carbide high purity powder, i-single crystal substrate, i-epitaxial, idivayisi yamandla, ukupakishwa kwemojula kanye nesicelo sokugcina, njll.

1. I-crystal substrate eyodwa iyinto esekelayo, impahla eqhubayo kanye ne-epitaxial ukukhula substrate ye-semiconductor. Njengamanje, izindlela zokukhula ze-SiC single crystal zifaka phakathi ukudluliswa kwegesi ngokomzimba (PVT), isigaba se-liquid (LPE), ukushisa okuphezulu kwamakhemikhali e-vapor deposition (htcvd) nokunye. 2. I-epitaxial silicon carbide epitaxial sheet ibhekisela ekukhuleni kwefilimu eyodwa yekristalu (ungqimba lwe-epitaxial) enezidingo ezithile kanye nokuma okufanayo njenge-substrate. Ngokusebenza okusebenzayo, amadivaysi e-wide band gap semiconductor cishe wonke akusendlalelo se-epitaxial, futhi ama-silicon carbide chips ngokwawo asetshenziswa njengama-substrates, okuhlanganisa izendlalelo ze-Gan epitaxial.

3. ubumsulwa obuphezuluI-SiCI-powder iyimpahla eluhlaza yokukhula kwe-silicon carbide single crystal ngendlela ye-PVT. Ukuhlanzeka komkhiqizo wayo kuthinta ngqo ikhwalithi yokukhula kanye nezakhiwo zikagesi ze-SiC single crystal.

4. idivayisi yamandla yenziwe nge-silicon carbide, enezici zokumelana nokushisa okuphezulu, imvamisa ephezulu nokusebenza kahle okuphezulu. Ngokusho kwendlela yokusebenza yedivayisi,I-SiCamadivayisi kagesi ikakhulukazi ahlanganisa ama-diode amandla namashubhu okushintsha amandla.

5. ekusetshenzisweni kwe-semiconductor yesizukulwane sesithathu, izinzuzo zesicelo sokugcina ukuthi zingakwazi ukuhambisana ne-GaN semiconductor. Ngenxa yezinzuzo zokusebenza kahle kokuguqulwa, izici zokushisa eziphansi kanye nesisindo esingasindi samadivayisi we-SiC, isidingo semboni esezansi nomfula siyaqhubeka nokwanda, esinomkhuba wokushintsha amadivaysi e-SiO2. Isimo samanje sokuthuthukiswa kwemakethe ye-silicon carbide sithuthuka ngokuqhubekayo. I-Silicon carbide ihola uhlelo lwemakethe yokuthuthukiswa kwe-semiconductor yesizukulwane sesithathu. Imikhiqizo ye-semiconductor yesizukulwane sesithathu ifakwe ngokushesha, izinkambu zokufaka izicelo zikhula ngokuqhubekayo, futhi imakethe ikhula ngokushesha ngokuthuthukiswa kwe-automobile electronics, ukuxhumana kwe-5g, ukushaja kwamandla kagesi kanye nokusetshenziswa kwezempi. .