Njengohlobo olusha lwezinto ezibonakalayo ze-semiconductor, i-SiC isiphenduke into ebaluleke kakhulu ye-semiconductor yokwenza amadivaysi e-optoelectronic ane-wavelength emifushane, amadivaysi okushisa aphezulu, amadivaysi okumelana nemisebe namandla aphezulu / amandla aphezulu kagesi ngenxa yezakhiwo zayo ezinhle kakhulu zomzimba namakhemikhali kanye izakhiwo zikagesi. Ikakhulukazi uma isetshenziswa ngaphansi kwezimo ezimbi kakhulu nezinzima, izici zedivayisi ye-SiC zidlula kude lezo zamadivayisi we-Si kanye namadivaysi e-GaAs. Ngakho-ke, amadivaysi e-SiC nezinhlobo ezihlukahlukene zezinzwa kancane kancane ziye zaba enye yamadivayisi abalulekile, adlala indima ebaluleke kakhulu.
Amadivaysi e-SiC namasekhethi athuthuke ngokushesha kusukela ngawo-1980, ikakhulukazi kusukela ngo-1989 lapho i-wafer yokuqala ye-SiC substrate ingena emakethe. Kweminye imikhakha, njengama-diode akhipha ukukhanya, amadivaysi anamandla aphezulu kanye ne-high-voltage, amadivaysi e-SiC asetshenziswe kabanzi kwezohwebo. Intuthuko iyashesha. Ngemva kweminyaka ecishe ibe yi-10 yokuthuthuka, inqubo yedivayisi ye-SiC isikwazile ukwenza amadivaysi okuthengisa. Izinkampani eziningi ezimelwe yiCree seziqalile ukuhlinzeka ngemikhiqizo yokuthengisa yamadivayisi we-SiC. Izikhungo zocwaningo lwasekhaya namanyuvesi nawo enze impumelelo egculisayo ekukhuleni kwezinto ezibonakalayo ze-SiC kanye nobuchwepheshe bokukhiqiza amathuluzi. Nakuba izinto ze-SiC zinezakhiwo eziphakeme kakhulu zomzimba namakhemikhali, kanye nobuchwepheshe bedivayisi ye-SiC nabo buvuthiwe, kodwa ukusebenza kwamadivayisi we-SiC namasekhethi akuphakeme. Ngokungeziwe ku-SiC impahla kanye nenqubo yedivayisi kudingeka ithuthukiswe njalo. Kufanele kwenziwe imizamo eyengeziwe yokuthi ungazisebenzisa kanjani izinto ze-SiC ngokuthuthukisa ukwakheka kwedivayisi ye-S5C noma ukuphakamisa ukwakheka kwedivayisi entsha.
Okwamanje. Ucwaningo lwamadivayisi e-SiC lugxile kakhulu kumadivayisi ahlukene. Kuhlobo ngalunye lwesakhiwo sedivayisi, ucwaningo lokuqala ukuvele kushintshe ukwakheka kwedivayisi ye-Si noma ye-GaAs ehambisanayo ku-SiC ngaphandle kokuthuthukisa ukwakheka kwedivayisi. Njengoba i-intrinsic oxide layer ye-SiC ifana ne-Si, eyi-SiO2, kusho ukuthi iningi lamadivayisi we-Si, ikakhulukazi amadivayisi we-m-pa, angenziwa ku-SiC. Nakuba kuwukufakelwa okulula nje, amanye amadivaysi atholiwe athole imiphumela egculisayo, kanti amanye amadivaysi asevele engenile emakethe yefekthri.
Amadivayisi we-SiC optoelectronic, ikakhulukazi ama-diode okukhanya okuluhlaza okwesibhakabhaka (ama-BLU-ray led), angenile emakethe ekuqaleni kwawo-1990 futhi angamadivayisi okuqala e-SiC akhiqizwa ngobuningi. Ama-voltage aphezulu ama-SiC Schottky diode, ama-SiC RF power transistors, ama-SiC MOSFET kanye nama-mesFET nawo ayatholakala ngokwentengiso. Vele, ukusebenza kwayo yonke le mikhiqizo ye-SiC kusekude nokudlala izici ezinhle kakhulu zezinto ze-SiC, futhi ukusebenza okuqinile nokusebenza kwamadivayisi we-SiC kusadingeka ukuthi kucwaningwe futhi kuthuthukiswe. Ukufakelwa okulula okunjalo ngokuvamile akukwazi ukusebenzisa ngokugcwele izinzuzo zezinto ze-SiC. Ngisho nasendaweni yezinye izinzuzo zamadivayisi we-SiC. Amanye amadivayisi e-SiC akhiqizwa ekuqaleni awakwazi ukufana nokusebenza kwamadivayisi ahambisanayo e-Si noma e-CaAs.
Ukuze uguqule kangcono izinzuzo zezici ze-SiC ezibonakalayo zibe izinzuzo zamadivayisi we-SiC, okwamanje sifunda indlela yokuthuthukisa inqubo yokukhiqiza idivayisi nesakhiwo sedivayisi noma ukuthuthukisa izakhiwo ezintsha nezinqubo ezintsha zokuthuthukisa ukusebenza nokusebenza kwamadivayisi we-SiC.
Isikhathi sokuthumela: Aug-23-2022