Ukwakheka kwe-silicon dioxide ebusweni be-silicon kubizwa ngokuthi i-oxidation, futhi ukwakhiwa kwe-silicon dioxide ezinzile futhi enamathela ngokuqinile kwaholela ekuzalweni kobuchwepheshe be-silicon edidiyelwe bokuhlanganisa wesifunda. Nakuba kunezindlela eziningi zokukhulisa i-silicon dioxide ngqo phezu kwe-silicon, ngokuvamile kwenziwa nge-oxidation eshisayo, okuwukuveza i-silicon endaweni yokushisa ephezulu ye-oxidizing (umoya-mpilo, amanzi). Izindlela ze-oxidation ezishisayo zingalawula ukushuba kwefilimu kanye nezici zesixhumi esibonakalayo se-silicon/silicon dioxide ngesikhathi sokulungiswa kwamafilimu e-silicon dioxide. Amanye amasu okukhulisa i-silicon dioxide i-plasma anodization kanye ne-anodization emanzi, kodwa awekho kulawa masu asetshenziswe kabanzi ezinqubweni ze-VLSI.
I-silicon ikhombisa ukuthambekela kokwenza i-silicon dioxide ezinzile. Uma i-silicon esanda kuqhekeka ivezwa endaweni ene-oxidizing (njenge-oxygen, amanzi), izokwakha ungqimba lwe-oxide oluncane kakhulu (<20Å) ngisho nasezingeni lokushisa legumbi. Lapho i-silicon ivezwa endaweni ene-oxidizing ekushiseni okuphezulu, ungqimba lwe-oxide olujiyile luzokhiqizwa ngesivinini esisheshayo. Indlela eyisisekelo yokwakheka kwe-silicon dioxide kusuka ku-silicon iqondwa kahle. U-Deal no-Grove bathuthukise imodeli yezibalo echaza ngokunembile ukukhula kwamafilimu e-oxide ajiyile kuno-300Å. Bahlongoze ukuthi i-oxidation yenziwe ngendlela elandelayo, okungukuthi, i-oxidant (ama-molecule amanzi nama-oxygen molecule) ihlakazeka ngongqimba olukhona lwe-oxide kuya kusixhumi esibonakalayo se-Si/SiO2, lapho i-oxidant isabela ne-silicon ukuze yakhe i-silicon dioxide. Ukusabela okuyinhloko ekwakheni i-silicon dioxide kuchazwa kanje:
Ukusabela kwe-oxidation kwenzeka kusixhumi esibonakalayo se-Si/SiO2, ngakho-ke lapho ungqimba lwe-oxide lukhula, i-silicon isetshenziswa ngokuqhubekayo futhi isixhumi esibonakalayo singena kancane kancane sihlasele i-silicon. Ngokwesisindo esihambisanayo kanye nesisindo samangqamuzana e-silicon ne-silicon dioxide, kungatholakala ukuthi i-silicon esetshenziselwa ukushuba kongqimba lokugcina lwe-oxide ingama-44%. Ngale ndlela, uma ungqimba lwe-oxide lukhula ngo-10,000Å, u-4400Å we-silicon uzosetshenziswa. Lobu budlelwano bubalulekile ekubaleni ukuphakama kwezinyathelo ezakhiwe ku-isicwecwana se-silicon. Izinyathelo ziwumphumela wamazinga ahlukene e-oxidation ezindaweni ezihlukene endaweni eyisicwecwana se-silicon.
Siphinde sihlinzeke ngemikhiqizo ye-high-purity graphite kanye ne-silicon carbide, esetshenziswa kabanzi ekucubunguleni i-wafer efana ne-oxidation, i-diffusion, kanye ne-annealing.
Yamukela noma yimaphi amakhasimende avela emhlabeni wonke ukuthi asivakashele ukuze uthole enye ingxoxo!
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Isikhathi sokuthumela: Nov-13-2024