I-silicon carbide impahla Kanye nezici zayo

Idivayisi ye-Semiconductor iwumgogodla wemishini yesimanje yemishini yezimboni, esetshenziswa kabanzi kumakhompiyutha, izinto zikagesi zabathengi, ukuxhumana kwenethiwekhi, ugesi wezimoto, nezinye izindawo ezibalulekile, imboni ye-semiconductor ikakhulukazi yakhiwa izingxenye ezine eziyisisekelo: amasekethe ahlanganisiwe, amadivayisi we-optoelectronic, idivayisi ehlukene, inzwa, ehlanganisa ngaphezu kuka-80% wamasekethe ahlanganisiwe, kaningi kanye ne-semiconductor nokulingana kwesekethe ehlanganisiwe.

Isifunda esihlanganisiwe, ngokuya ngesigaba somkhiqizo sihlukaniswe ikakhulukazi izigaba ezine: i-microprocessor, inkumbulo, amadivaysi anengqondo, izingxenye zesilingisi. Kodwa-ke, ngokunwetshwa okuqhubekayo kwensimu yesicelo semishini ye-semiconductor, izikhathi eziningi ezikhethekile zidinga ukuthi ama-semiconductors akwazi ukunamathela ekusetshenzisweni kokushisa okuphezulu, imisebe eqinile, amandla aphezulu nezinye izindawo, zingalimazi, isizukulwane sokuqala nesesibili izinto zokwakha ze-semiconductor azinamandla, ngakho-ke isizukulwane sesithathu sezinto ze-semiconductor saba khona.

Njengamanje, i-wide band gap semiconductor materials emelelwa yii-silicon carbide(SiC), i-gallium nitride (GaN), i-zinc oxide (ZnO), idayimane, i-aluminium nitride (i-AlN) ithatha imakethe ehamba phambili ngezinzuzo ezinkulu, ngokuhlangene okubizwa ngokuthi yizinto zokwakha ze-semiconductor yesizukulwane sesithathu. Isizukulwane sesithathu sezinto zokwakha ze-semiconductor ezinobubanzi begebe elibanzi, indawo kagesi yokuwohloka iphezulu, i-thermal conductivity, isilinganiso se-electronic saturated rate kanye nekhono eliphakeme lokumelana nemisebe, ifaneleka kakhulu ukwenza izinga lokushisa eliphezulu, imvamisa ephezulu, ukumelana nemisebe kanye namadivayisi anamandla amakhulu. , ngokuvamile okwaziwa ngokuthi i-wide bandgap semiconductor materials (ububanzi bebhendi obunqatshelwe bukhulu kuno-2.2 eV), okubuye kubizwe ngezinga lokushisa eliphezulu izinto ze-semiconductor. Kusukela ocwaningweni lwamanje lwezinto zokwakha ze-semiconductor yesizukulwane sesithathu namadivayisi, i-silicon carbide kanye ne-gallium nitride semiconductor materials zivuthwe kakhulu, futhiubuchwepheshe be-silicon carbideivuthwe kakhulu, kuyilapho ucwaningo lwe-zinc oxide, idayimane, i-aluminium nitride nezinye izinto lusasesigabeni sokuqala.

Izinto zokwakha kanye nezakhiwo zazo:

I-silicon carbideimpahla isetshenziswa kabanzi ku-ceramic ball bearings, valves, semiconductor materials, gyros, amathuluzi okulinganisa, i-aerospace kanye neminye imikhakha, isiphenduke into engenakushintshwa emikhakheni eminingi yezimboni.

I-SiC iwuhlobo lwe-superlattice yemvelo kanye ne-polytype ejwayelekile ye-homogeneous. Kunemindeni engaphezu kuka-200 (okwamanje eyaziwa) ye-polytypic ye-homotypic ngenxa yomehluko wokulandelana kokupakisha phakathi kwezingqimba ze-diatomic ze-Si kanye no-C, eziholela ezakhiweni ezihlukene zekristalu. Ngakho-ke, i-SiC ifaneleka kakhulu esizukulwaneni esisha se-substrate ephumayo (LED) substrate material, izinto ezisetshenziswayo zikagesi ezinamandla aphezulu.