Inqubo yokukhula kwekristalu ye-silicon carbide kanye nobuchwepheshe bemishini

1. Umzila wobuchwepheshe bokukhula kwekristalu ye-SiC

I-PVT (indlela ye-sublimation),

I-HTCVD (izinga lokushisa eliphakeme le-CVD),

I-LPE(indlela yesigaba samanzi)

ezintathu ezivamileIkristalu ye-SiCizindlela zokukhula;

Indlela eyaziwa kakhulu embonini yindlela ye-PVT, futhi ngaphezu kwe-95% yamakristalu e-SiC eyodwa akhuliswa ngendlela ye-PVT;

IzimboniIkristalu ye-SiCisithando somlilo sisebenzisa umzila wobuchwepheshe we-PVT ojwayelekile wemboni.

2. Inqubo yokukhula kwekristalu ye-SiC

I-Powder synthesis-seed crystal treatment-crystal growth-ingot annealing-isilucwecwanaukucubungula.

3. Indlela ye-PVT yokukhulaAmakristalu e-SiC

I-SiC impahla eluhlaza ibekwe phansi kwe-graphite crucible, futhi i-crystal yembewu ye-SiC ingaphezulu kwe-graphite crucible. Ngokulungisa ukufakwa, izinga lokushisa ku-SiC impahla eluhlaza liphakeme futhi izinga lokushisa ku-crystal imbewu liphansi. I-SiC eluhlaza emazingeni okushisa aphezulu i-sublimates futhi ibole ibe yizinto zesigaba segesi, ezithuthelwa ku-crystal imbewu enezinga lokushisa eliphansi futhi icwebeze ukuze yenze amakristalu e-SiC. Inqubo yokukhula eyisisekelo ihlanganisa izinqubo ezintathu: ukubola kanye ne-sublimation yezinto zokusetshenziswa, ukudluliswa kwenqwaba, kanye nokucwebezela kwamakristalu embewu.

Ukubola kanye sublimation izinto zokusetshenziswa:

SiC(S)= Si(g)+C(S)

2SiC(S)= Si(g)+ SiC2(g)

2SiC(S)=C(S)+SiC2(g)

Ngesikhathi sokudlulisa ngobuningi, umhwamuko we-Si uqhubeka usabela ngodonga lwe-graphite crucible ukwakha i-SiC2 ne-Si2C:

Si(g)+2C(S) =SiC2(g)

2Si(g) +C(S)=Si2C(g)

Ebusweni bekristalu yembewu, izigaba ezintathu zegesi zikhula ngokusebenzisa amafomula amabili alandelayo ukukhiqiza amakristalu e-silicon carbide:

I-SiC2_(g)+Si2C_(g)=3SiC_(s)

Si_(g)+SiC2_(g)=2SiC_(S)

4. Indlela ye-PVT yokukhulisa umzila wezobuchwepheshe bemishini yokukhula ye-SiC crystal

Njengamanje, ukushisa kwe-induction kuyindlela yobuchwepheshe evamile ye-PVT indlela ye-SiC crystal ukukhula komlilo;

Ikhoyili yangaphandle yokushisa yokungeniswa kanye nokushisa kokumelana ne-graphite kuyisiqondiso sokuthuthukiswaIkristalu ye-SiCamaziko okukhula.

5. Isithando somlilo sokufudumeza esingu-8-inch SiC

(1) Ukushisa i-i-graphite crucible isici sokushisangokusebenzisa induction magnetic field; ukulawula inkambu yokushisa ngokulungisa amandla okushisa, indawo yekhoyili, kanye nesakhiwo sokushisa;

(2) Ukushisa i-graphite crucible ngokusebenzisa ukushisa kwe-graphite ukumelana nokushisa kwe-radiation conduction; ukulawula inkambu yokushisa ngokulungisa i-current ye-heater graphite, isakhiwo se-heater, kanye nokulawula kwamanje kwendawo;