Ubuchwepheshe be-Photolithography ikakhulukazi bugxile ekusebenziseni amasistimu okubona ukuveza amaphethini wesifunda kumawafa e-silicon. Ukunemba kwale nqubo kuthinta ngqo ukusebenza kanye nesivuno samasekethe ahlanganisiwe. Njengomunye wemishini ephezulu yokukhiqiza ama-chip, umshini we-lithography uqukethe izingxenye ezifika kumakhulu ezinkulungwane. Kokubili izingxenye ze-optical kanye nezingxenye ngaphakathi kwesistimu ye-lithography zidinga ukunemba okuphezulu kakhulu ukuze kuqinisekiswe ukusebenza kwesifunda nokunemba.I-ceramics ye-SiCzisetshenziswe kuama-wafer chuckskanye nezibuko ze-ceramic square.
I-wafer chuckI-wafer chuck emshinini we-lithography ithwala futhi ihambisa isicwecwe ngesikhathi senqubo yokuchayeka. Ukuqondanisa okunembayo phakathi kwe-wafer ne-chuck kubalulekile ukuze kuphindwe ngokunembile iphethini ebusweni bewafa.Isicwecwana se-SiCama-chuck aziwa ngesisindo sawo esingasindi, ukuqina kwawo okuphezulu kanye ne-coefficient ephansi yokwandisa ukushisa okushisayo, okunganciphisa imithwalo ye-inertial futhi kuthuthukise ukusebenza kahle kokunyakaza, ukubeka ukunemba nokuzinza.
Isibuko sesikwele se-Ceramic Emshinini we-lithography, ukuvumelanisa ukunyakaza phakathi kwe-wafer chuck nesiteji semaski kubalulekile, okuthinta ngokuqondile ukunemba kwe-lithography kanye nesivuno. Isibonisi esiyisikwele siyingxenye ebalulekile yesistimu yokukala impendulo yokuskena eyisicwecwana se-wafer chuck, futhi izimfuneko zayo zezinto ezibonakalayo azisindi futhi ziqinile. Nakuba i-silicon carbide ceramics inezakhiwo ezikahle ezingasindi, ukukhiqiza izinto ezinjalo kuyinselele. Njengamanje, abakhiqizi bemishini yesekethe edidiyelwe yamazwe ngamazwe ikakhulukazi basebenzisa izinto ezifana ne-silica ehlanganisiwe ne-cordierite. Kodwa-ke, ngokuthuthuka kobuchwepheshe, ochwepheshe baseShayina baye bazuza ukwakhiwa kwezibuko zesikwele ze-silicon carbide ze-ceramic ezinobukhulu obukhulu, obuyinkimbinkimbi, obungasindi obugcwele kanye nezinye izingxenye ezisebenzayo zemishini ye-photolithography. I-photomask, eyaziwa nangokuthi i-aperture, idlulisa ukukhanya ngemaski ukwenza iphethini ezintweni ezizwelayo. Kodwa-ke, lapho ukukhanya kwe-EUV kukhanyisa imaski, ikhipha ukushisa, ikhuphule izinga lokushisa libe ngu-600 kuya ku-1000 degrees Celsius, okungase kubangele umonakalo oshisayo. Ngakho-ke, ungqimba lwefilimu ye-SiC luvame ukufakwa ku-photomask. Izinkampani eziningi zakwamanye amazwe, njenge-ASML, manje zinikeza amafilimu anokudlulisa okungaphezu kuka-90% ukuze kuncishiswe ukuhlanzwa nokuhlolwa ngesikhathi kusetshenziswa imaski yezithombe futhi kuthuthukiswe ukusebenza kahle kanye nesivuno somkhiqizo wemishini ye-EUV photolithography.
Ukufakwa kwe-Plasmakanye nama-Deposition Photomasks, aziwa nangokuthi ama-crosshairs, anomsebenzi oyinhloko wokudlulisa ukukhanya ngemaski nokwenza iphethini ezintweni ezizwelayo. Nokho, lapho ukukhanya kwe-EUV (extreme ultraviolet) kukhanyisa imaski yesithombe, kukhipha ukushisa, kukhuphule izinga lokushisa libe phakathi kuka-600 no-1000 degrees Celsius, okungase kubangele umonakalo oshisayo. Ngakho-ke, ungqimba lwefilimu ye-silicon carbide (SiC) ivamise ukufakwa ku-photomask ukuze kudambise le nkinga. Njengamanje, izinkampani eziningi zakwamanye amazwe, njenge-ASML, seziqalile ukuhlinzeka amafilimu ngokusobala okungaphezu kwama-90% ukuze kuncishiswe isidingo sokuhlanza nokuhlolwa ngesikhathi kusetshenziswa i-photomask, ngaleyo ndlela kuthuthukiswe ukusebenza kahle kanye nesivuno somkhiqizo wemishini ye-EUV lithography. . Ukufakwa kwePlasma kanyeDeposition Focus Ringkanye nokunye Ekwenziweni kwe-semiconductor, inqubo yokuhlanganisa isebenzisa izinsimbi eziwuketshezi noma zegesi (njengamagesi aqukethe i-fluorine) afakwe ku-plasma ukuze kuqhunyiswe isinkwa esilucwecwana futhi ngokukhetha asuse izinto ezingafuneki kuze kube yilapho iphethini yesekethe efunekayo isala ku-plasma.isilucwecwanaphezulu. Ngokuphambene, ukubekwa kwefilimu emincane kufana nohlangothi olungemuva lwe-etching, kusetshenziswa indlela yokubeka ukupakisha izinto ezivikelayo phakathi kwezingqimba zensimbi ukuze kwakhe ifilimu elincanyana. Njengoba zombili izinqubo zisebenzisa ubuchwepheshe be-plasma, zivame ukuba nemiphumela elimazayo emakamelweni nasezintweni. Ngakho-ke, izakhi ezingaphakathi kwemishini zidingeka ukuthi zibe nokuphikiswa okuhle kwe-plasma, ukuphinda kusebenze kabusha okuphansi kumagesi e-fluorine etching, kanye nokusebenza okuphansi. Izingxenye zemishini yokunamathisela kanye ne-deposition, njengezindandatho zokugxila, ngokuvamile zenziwe ngezinto ezifana ne-silicon noma i-quartz. Kodwa-ke, ngokuthuthuka kwe-miniaturization yesekethe edidiyelwe, isidingo nokubaluleka kwezinqubo zokuhlanganisa ekukhiqizeni isekethe edidiyelwe kuyakhula. Ezingeni le-microscopic, ukubethelwa kwe-silicon wafer okunembile kudinga i-plasma enamandla amakhulu ukuze kuzuzwe ububanzi bemigqa emincane kanye nezakhiwo zedivayisi eziyinkimbinkimbi. Ngakho-ke, i-chemical vapor deposition (CVD) silicon carbide (SiC) kancane kancane isiphenduke into enconyelwayo yokuhlanganisa yokushumeka kanye nemishini yokubeka enezakhiwo zayo ezinhle kakhulu zomzimba namakhemikhali, ubumsulwa obuphezulu kanye nokufana. Njengamanje, izingxenye ze-CVD silicon carbide emishinini yokuhlanganisa zihlanganisa izindandatho zokugxila, amakhanda eshawa yegesi, amathreyi namasongo onqenqema. Emishinini yokubeka, kukhona izembozo zamakamelo, ama-chamber liners kanyeAma-graphite substrates ahlanganiswe nge-SIC.
Ngenxa ye-reactivity ephansi kanye nokusebenza kahle kwe-chlorine namagesi e-fluorine etching,I-CVD i-silicon carbideisibe yimpahla efanelekile yezingxenye ezifana namasongo okugxila kumishini yokufaka i-plasma.I-CVD i-silicon carbideizingxenye zemishini yokuqopha zihlanganisa izindandatho zokugxilisa ingqondo, amakhanda eshawa yegesi, amathreyi, amasongo onqenqema, njll. Thatha izindandatho zokugxila njengesibonelo, ziyizingxenye ezibalulekile ezibekwe ngaphandle kwewafa futhi ezithintana ngqo newafa. Ngokusebenzisa i-voltage kwendandatho, i-plasma igxiliswa ngendandatho ku-wafer, ithuthukisa ukufana kwenqubo. Ngokwesiko, izindandatho zokugxila zenziwe nge-silicon noma i-quartz. Kodwa-ke, njengoba i-miniaturization yesifunda edidiyelwe ithuthuka, isidingo nokubaluleka kwezinqubo zokuhlanganisa ekwenziweni kwesekethe edidiyelwe kuyaqhubeka nokukhula. Izidingo zamandla e-Plasma etching namandla ziyaqhubeka nokukhuphuka, ikakhulukazi emishinini yokuhlanganisa i-plasma (CCP) ehlanganiswe nge-capacitively, edinga amandla aphezulu e-plasma. Ngenxa yalokho, ukusetshenziswa kwezindandatho zokugxila ezenziwe ngezinto ze-silicon carbide kuyanda.
Isikhathi sokuthumela: Oct-29-2024