I-SiC substrates impahla ye-LED epitaxial wafer ukukhula, i-SiC Coated Graphite Carriers

Izingxenye ze-graphite ezihlanzekile zibalulekileizinqubo ku-semiconductor, i-LED kanye nemboni yelanga. Ukunikezwa kwethu kusuka ezintweni ezisetshenziswayo ze-graphite zezindawo ezishisayo ezikhula njengekristalu (izifudumezi, izixhumi ze-crucible susceptors, insulation), kuya ezingxenyeni zegraphite ezinembayo zemishini yokucubungula i-wafer, njenge-silicon carbide coated graphite susceptors ye-Epitaxy noma i-MOCVD. Yilapho i-graphite yethu ekhethekile iqala khona ukusebenza: i-isostatic graphite ibalulekile ekukhiqizeni izendlalelo ezihlanganisiwe ze-semiconductor.Lezi zikhiqizwa "endaweni eshisayo" ngaphansi kwamazinga okushisa aphakeme ngesikhathi esibizwa nge-epitaxy, noma inqubo ye-MOCVD. Isithwali esijikelezayo lapho amawafa ambozwe khona ku-reactor, siqukethe i-silicon carbide-coated isostatic graphite. Yile graphite ehlanzekile kakhulu, ene-homogeneous kuphela ehlangabezana nezidingo eziphakeme enqubweni yokumboza.

TUmgomo wakhe oyisisekelo wokukhula kwe-epitaxial wafer yi-LED: ku-substrate (ikakhulukazi isafire, i-SiC ne-Si) eshisiswe kuzinga lokushisa elifanele, impahla yegesi i-InGaAlP ithuthelwa endaweni engaphansi kwe-substrate ngendlela elawulwayo ukuze kukhule ifilimu ethile yekristalu eyodwa. Njengamanje, ubuchwepheshe bokukhula be-LED epitaxial wafer ikakhulukazi busebenzisa i-organic metal chemical vapor deposition.
I-LED epitaxial substrate impahlaiyisisekelo sokuthuthukiswa kobuchwepheshe bemboni yokukhanyisa i-semiconductor. Izinto ezihlukile ze-substrate zidinga ubuchwepheshe obuhlukile bokukhula kwe-epitaxial wafer ye-LED, ubuchwepheshe bokucubungula ama-chip nobuchwepheshe bokupakisha bedivayisi. Izinto ze-substrate zinquma umzila wokuthuthukiswa kobuchwepheshe bokukhanyisa kwe-semiconductor.

Izici zokukhethwa kwe-LED epitaxial wafer substrate:

1. Impahla ye-epitaxial inesakhiwo sekristalu esifanayo noma esifanayo ne-substrate, ukungafani okungaguquki kwe-lattice encane, ubucwebe obuhle kanye nokuminyana kwesici esiphansi.

2. Izici ezinhle zesixhumi esibonakalayo, ezihambisana ne-nucleation yezinto ze-epitaxial kanye nokunamathela okuqinile

3. Inokuqina okuhle kwamakhemikhali futhi akulula ukubola nokugqwala kumazinga okushisa nasemkhathini wokukhula kwe-epitaxial

4. Ukusebenza okuhle kwe-thermal, okuhlanganisa ukuqhutshwa kahle kwe-thermal kanye nokungafani okuphansi kokushisa

5. I-conductivity enhle, ingenziwa ibe yisakhiwo esingaphezulu nesingaphansi 6, ukusebenza kahle kwe-optical, futhi ukukhanya okukhishwa idivayisi eyenziwe kudonswa kancane yi-substrate.

7. Izakhiwo ezinhle zemishini nokucutshungulwa kalula kwamadivayisi, okuhlanganisa ukucwenga, ukupholisha nokusika

8. Intengo ephansi.

9. Usayizi omkhulu. Ngokuvamile, ububanzi akumele bube ngaphansi kwama-intshi angu-2.

10. Kulula ukuthola i-substrate ye-shape ejwayelekile (ngaphandle uma kunezinye izidingo ezikhethekile), futhi umumo we-substrate ofana nomgodi wethreyi wemishini ye-epitaxial akulula ukwenza i-eddy current engavamile, ukuze ithinte ikhwalithi ye-epitaxial.

11. Ngokwesisekelo sokungathinti ikhwalithi ye-epitaxial, ukusebenziseka kwe-substrate kuzohlangabezana nezimfuneko zokucutshungulwa kwe-chip nokupakisha okulandelayo ngangokunokwenzeka.

Kunzima kakhulu ukukhethwa kwe-substrate ukuhlangabezana nalezi zici ezingenhla eziyishumi nanye ngesikhathi esifanayo. Ngakho-ke, okwamanje, singakwazi ukuzivumelanisa ne-R & D kuphela nokukhiqizwa kwamadivayisi akhipha ukukhanya kwe-semiconductor kuma-substrates ahlukene ngokushintsha ubuchwepheshe bokukhula kwe-epitaxial kanye nokulungiswa kobuchwepheshe bokucubungula idivayisi. Ziningi izinto ezingaphansi kwe-substrate zocwaningo lwe-gallium nitride, kodwa kunezingxenye ezimbili kuphela ezingasetshenziselwa ukukhiqizwa, okuyi-sapphire Al2O3 ne-silicon carbide.I-SiC substrates.