I-SiC oxidation - ukunamathela okuqinile kwalungiswa endaweni yegraphite ngenqubo ye-CVD

I-SiC coating ingalungiswa nge-chemical vapor deposition (CVD), ukuguqulwa kwesandulela, isifutho se-plasma, njll. I-coating elungiselelwe i-CHEMICAL vapor deposition ifana futhi ihlangene, futhi inokuklama okuhle. Ukusebenzisa i-methyl trichlorsilane. (CHzSiCl3, MTS) njengomthombo we-silicon, ukugqoka kwe-SiC okulungiselelwe indlela ye-CVD kuyindlela evuthiwe yokusetshenziswa kwalokhu kunamathela.
I-SiC enamathela kanye ne-graphite inokuhambisana okuhle kwamakhemikhali, umehluko we-coefficient yokwandisa okushisayo phakathi kwabo mncane, usebenzisa i-SiC coating ingathuthukisa ngempumelelo ukumelana nokugqoka kanye nokumelana ne-oxidation yezinto ze-graphite. Phakathi kwazo, isilinganiso se-stoichiometric, izinga lokushisa lokusabela, igesi yokuhlanza, igesi yokungcola nezinye izimo zinethonya elikhulu ekuphenduleni.

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Isikhathi sokuthumela: Sep-14-2022
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