Siyakwamukela kuwebhusayithi yethu ukuze uthole ulwazi lomkhiqizo nokubonisana.
Iwebhusayithi yethu:https://www.vet-china.com/
Ukufakwa kwe-Poly ne-SiO2:
Ngemuva kwalokhu, i-Poly ne-SiO2 eyeqile iyaqoshwa, okungukuthi, iyasuswa. Ngalesi sikhathi, isiqondisoetchingiyasetshenziswa. Ekuhlukaniseni i-etching, kukhona ukuhlukaniswa kwe-etching eqondile kanye ne-non-directional etching. I-Directional etching ibhekisela kuetchingendaweni ethile, kuyilapho i-non-directional etching ingekho i-directional (ngisho okuningi ngephutha. Ngamafuphi, ukususa i-SiO2 endaweni ethile ngokusebenzisa ama-asidi nezisekelo ezithile). Kulesi sibonelo, sisebenzisa i-etching eya phansi ukuze sisuse i-SiO2, futhi iba kanje.
Ekugcineni, susa i-photoresist. Ngalesi sikhathi, indlela yokukhipha i-photoresist ayiyona ukuvuselela ngokusebenzisa ukukhanya kwe-irradiation okukhulunywe ngenhla, kodwa ngezinye izindlela, ngoba akudingeki sichaze usayizi othize ngalesi sikhathi, kodwa ukususa yonke i-photoresist. Ekugcineni, iba njengoba kukhonjisiwe emfanekisweni olandelayo.
Ngale ndlela, sifinyelele inhloso yokugcina indawo ethile ye-Poly SiO2.
Ukwakhiwa komthombo kanye nokukhipha amanzi:
Ekugcineni, ake sicabangele indlela umthombo nokukhipha amanzi akhiwe ngayo. Wonke umuntu usakhumbula ukuthi sakhuluma ngakho eshicileleni elidlule. Umthombo kanye ne-drain kufakwe i-ion ngohlobo olufanayo lwezakhi. Ngalesi sikhathi, singasebenzisa i-photoresist ukuvula indawo yomthombo/yokukhipha lapho uhlobo lwe-N ludinga ukutshalwa khona. Njengoba sithatha kuphela i-NMOS njengesibonelo, zonke izingxenye emfanekisweni ongenhla zizovulwa, njengoba kuboniswe esithombeni esilandelayo.
Njengoba ingxenye embozwe i-photoresist ingakwazi ukumiliselwa (ukukhanya kuvinjiwe), izakhi zohlobo lwe-N zizofakwa kuphela ku-NMOS edingekayo. Njengoba i-substrate engaphansi kwe-poly ivinjwe i-poly ne-SiO2, ngeke ifakwe, ngakho iba kanje.
Kuleli qophelo, imodeli ye-MOS elula yenziwe. Ngokombono, uma i-voltage yengezwa kumthombo, i-drain, i-poly ne-substrate, le-MOS ingasebenza, kodwa asikwazi nje ukuthatha i-probe bese sengeza i-voltage ngqo emthonjeni kanye nokukhipha amanzi. Ngalesi sikhathi, izintambo ze-MOS ziyadingeka, okungukuthi, kule MOS, xhuma izintambo ukuze uxhume ama-MOS amaningi ndawonye. Ake sibheke inqubo yokufaka izintambo.
Ukwenza i-VIA:
Isinyathelo sokuqala ukumboza yonke i-MOS ngongqimba lwe-SiO2, njengoba kukhonjisiwe esithombeni esingezansi:
Yiqiniso, le SiO2 ikhiqizwa yi-CVD, ngoba ishesha kakhulu futhi yonga isikhathi. Okulandelayo kuseyinqubo yokubeka i-photoresist nokuvezwa obala. Ngemva kokuphela, kubukeka kanje.
Bese usebenzisa indlela yokufaka ukuze ujube imbobo ku-SiO2, njengoba kukhonjisiwe engxenyeni empunga emfanekisweni ongezansi. Ukujula kwalo mgodi kuthinta ngqo indawo ye-Si.
Ekugcineni, susa i-photoresist futhi uthole ukubukeka okulandelayo.
Ngalesi sikhathi, okufanele kwenziwe ukugcwalisa umqhubi kulo mgodi. Uyini lo mqhubi? Inkampani ngayinye ihlukile, iningi lazo ama-tungsten alloys, ngakho-ke lo mgodi ungagcwaliswa kanjani? Indlela ye-PVD (Physical Vapor Deposition) isetshenziswa, futhi isimiso sifana nesibalo esingezansi.
Sebenzisa ama-electron noma ama-ion anamandla amakhulu ukuze uqhume okokusebenza okuqondiwe, futhi okuphokophelwe okuphukile kuzowela phansi ngendlela yama-athomu, ngaleyo ndlela kwakhe ukunamathela ngezansi. Okubalulekile okuhlosiwe esivame ukukubona ezindabeni kubhekise kokubalulekile lapha.
Ngemva kokugcwalisa umgodi, kubonakala kanje.
Yiqiniso, uma siyigcwalisa, akunakwenzeka ukulawula ubukhulu bokugqoka ukuze bulingane ncamashi nokujula kwembobo, ngakho-ke kuyoba khona okweqile, ngakho-ke sisebenzisa ubuchwepheshe be-CMP (Chemical Mechanical Polishing), okuzwakala kakhulu. okusezingeni eliphezulu, kodwa empeleni ukugaya, ukugaya kude izingxenye ngokweqile. Umphumela uba kanje.
Kuleli qophelo, sesiqedile ukukhiqiza isendlalelo se- via. Yiqiniso, ukukhiqizwa kwe- via ikakhulukazi okokufaka izintambo kongqimba lwensimbi ngemuva.
Ukukhiqizwa kwesendlalelo sensimbi:
Ngaphansi kwezimo ezingenhla, sisebenzisa i-PVD ukucwilisa olunye ungqimba lwensimbi. Le nsimbi ngokuyinhloko iyingxubevange esekwe ngethusi.
Khona-ke ngemva kokuchayeka kanye ne-etching, sithola esikufunayo. Bese uqhubeka unqwabelanisa size sihlangabezane nezidingo zethu.
Uma sidweba isakhiwo, sizokutshela ukuthi zingaki izendlalelo zensimbi futhi ngenqubo esetshenzisiwe zingapakishwa kakhulu, okusho ukuthi zingaki izendlalelo ezingapakishwa.
Ekugcineni, sithola lesi sakhiwo. Iphedi eliphezulu iphinikhodi yale chip, futhi ngemva kokupakishwa, iba iphinikhodi esingayibona (impela, ngiyidwebe ngokungahleliwe, akukho kubaluleka okusebenzayo, isibonelo nje).
Lena inqubo evamile yokwenza i-chip. Kulolu shicilelo, sifunde mayelana nokuchayeka okubaluleke kakhulu, i-etching, i-ion implantation, amashubhu esithandweni somlilo, i-CVD, i-PVD, i-CMP, njll. ku-semiconductor foundry.
Isikhathi sokuthumela: Aug-23-2024