Izisekelo ze-graphite ezinamekwe nge-SiC zivame ukusetshenziselwa ukusekela nokushisisa ama-crystal substrates e-metal-organic chemical vapor deposition (MOCVD) imishini. Ukuzinza okushisayo, ukufana okushisayo kanye neminye imingcele yokusebenza yesisekelo se-graphite ehlanganiswe ne-SiC idlala indima ewujuqu kukhwalithi yokukhula kwezinto ezibonakalayo ze-epitaxial, ngakho-ke iyingxenye eyinhloko eyinhloko yemishini ye-MOCVD.
Enqubweni yokukhiqiza i-wafer, izendlalelo ze-epitaxial ziphinde zakhiwe kwamanye ama-wafer substrates ukuze kube lula ukukhiqizwa kwamadivayisi. Amadivayisi ajwayelekile akhipha ukukhanya kwe-LED adinga ukulungisa izendlalelo ze-epitaxial zama-GaAs kuma-silicon substrates; I-SiC epitaxial layer ikhuliswe ku-substrate ye-SiC ye-conductive ukuze kwakhiwe amadivayisi afana ne-SBD, i-MOSFET, njll., ye-voltage ephezulu, amandla aphezulu kanye nezinye izinhlelo zokusebenza zamandla; I-GaN epitaxial layer yakhiwe phezu kwe-Semi-insulated SiC substrate ukuze kuqhutshekwe nokwakhiwa kwe-HEMT namanye amadivaysi ezinhlelo zokusebenza ze-RF ezifana nokuxhumana. Le nqubo ayinakuhlukaniswa nemishini ye-CVD.
Emishini ye-CVD, i-substrate ayikwazi ukubekwa ngokuqondile ensimbi noma ivele ibekwe phezu kwesisekelo se-epitaxial deposition, ngoba ihilela ukugeleza kwegesi (okuvundlile, okuqondile), izinga lokushisa, ingcindezi, ukulungiswa, ukuchithwa kokungcola nezinye izici izici zethonya. Ngakho-ke, kudingekile ukusebenzisa isisekelo, bese ubeka i-substrate ku-disc, bese usebenzisa ubuchwepheshe be-CVD ekufakeni i-epitaxial ku-substrate, okuyisisekelo se-graphite esihlanganisiwe se-SiC (esaziwa nangokuthi i-tray).
Izisekelo ze-graphite ezinamekwe nge-SiC zivame ukusetshenziselwa ukusekela nokushisisa ama-crystal substrates e-metal-organic chemical vapor deposition (MOCVD) imishini. Ukuzinza okushisayo, ukufana okushisayo kanye neminye imingcele yokusebenza yesisekelo se-graphite ehlanganiswe ne-SiC idlala indima ewujuqu kukhwalithi yokukhula kwezinto ezibonakalayo ze-epitaxial, ngakho-ke iyingxenye eyinhloko eyinhloko yemishini ye-MOCVD.
I-Metal-organic chemical vapor deposition (MOCVD) ubuchwepheshe obujwayelekile bokukhula kwe-epitaxial kwamafilimu e-GaN ku-LED eluhlaza okwesibhakabhaka. Inezinzuzo zokusebenza okulula, izinga lokukhula elilawulekayo kanye nokuhlanzeka okuphezulu kwamafilimu e-GaN. Njengengxenye ebalulekile ekamelweni lokuphendula lemishini ye-MOCVD, isisekelo sokuthwala esisetshenziselwa ukukhula kwefilimu ye-GaN epitaxial idinga ukuba nezinzuzo zokumelana nokushisa okuphezulu, ukuguquguquka kokushisa okufanayo, ukuqina okuhle kwamakhemikhali, ukumelana nokushaqeka okushisayo okuqinile, njll. Izinto ze-graphite zingahlangana izimo ezingenhla.
Njengenye yezingxenye eziyinhloko zemishini ye-MOCVD, isisekelo se-graphite singumzimba othwala nokushisa we-substrate, enquma ngokuqondile ukufana nokuhlanzeka kwezinto zefilimu, ngakho ikhwalithi yayo ithinta ngokuqondile ukulungiswa kweshidi le-epitaxial, futhi ngesikhathi esifanayo. isikhathi, ngokwanda kwenani lokusetshenziswa kanye nokushintsha kwezimo zokusebenza, kulula kakhulu ukugqoka, okuyingxenye yezinto ezisetshenziswayo.
Nakuba i-graphite ine-conductivity enhle kakhulu yokushisa nokuzinza, inenzuzo enhle njengengxenye yesisekelo semishini ye-MOCVD, kodwa inqubo yokukhiqiza, i-graphite izogqwala i-powder ngenxa yensalela yamagesi agqwalayo kanye ne-metallic organics, kanye nempilo yesevisi Isisekelo se-graphite sizoncishiswa kakhulu. Ngesikhathi esifanayo, i-graphite powder ewayo izobangela ukungcola ku-chip.
Ukuvela kobuchwepheshe bokumboza kunganikeza ukulungiswa kwe-powder ebusweni, ukuthuthukisa ukuqhutshwa kokushisa, nokulinganisa ukusatshalaliswa kokushisa, okuye kwaba ubuchwepheshe obuyinhloko bokuxazulula le nkinga. Isisekelo segraphite endaweni yokusetshenziswa kwemishini ye-MOCVD, i-graphite base surface coating kufanele ihlangabezane nalezi zici ezilandelayo:
(1) Isisekelo segraphite singagoqwa ngokugcwele, futhi ukuminyana kuhle, ngaphandle kwalokho isisekelo segraphite kulula ukugqwala egesini edlayo.
(2) Amandla okuhlanganisa nesisekelo segraphite aphakeme ukuze kuqinisekiswe ukuthi ukunamathela akulula ukuwa ngemva kwezinga lokushisa eliphakeme eminingana kanye nemijikelezo yokushisa ephansi.
(3) Inokuqina okuhle kwamakhemikhali ukuze igweme ukwehluleka ukunamathela endaweni yokushisa ephezulu kanye nomoya ogqwalayo.
I-SiC inezinzuzo zokumelana nokugqwala, ukuguquguquka okuphezulu kokushisa, ukumelana nokushaqeka okushisayo kanye nokuzinza okuphezulu kwamakhemikhali, futhi ingasebenza kahle ku-GaN epitaxial atmosphere. Ukwengeza, i-coefficient yokwandisa okushisayo ye-SiC ihluke kancane kakhulu kuleyo ye-graphite, ngakho-ke i-SiC iyinto ekhethwayo yokumbozwa kwendawo ye-graphite base.
Njengamanje, i-SiC evamile iwuhlobo lwe-3C, 4H no-6H, futhi ukusetshenziswa kwe-SiC kwezinhlobo ze-crystal ezahlukene kuhlukile. Isibonelo, i-4H-SiC ingakha amadivaysi anamandla amakhulu; I-6H-SiC iyisimeme kunazo zonke futhi ingakha amadivaysi kagesi wezithombe; Ngenxa yesakhiwo sayo esifanayo ne-GaN, i-3C-SiC ingasetshenziselwa ukukhiqiza ungqimba lwe-GaN epitaxial nokwenza amadivayisi we-SiC-GaN RF. I-3C-SiC yaziwa nangokuthi i-β-SiC, futhi ukusetshenziswa okubalulekile kwe-β-SiC kufana nefilimu kanye nezinto zokumboza, ngakho-ke i-β-SiC okwamanje iyinhloko yokugqoka.
Isikhathi sokuthumela: Aug-04-2023