Izisekelo ze-graphite ezinamekwe nge-SiC zivame ukusetshenziselwa ukusekela nokushisisa ama-crystal substrates e-metal-organic chemical vapor deposition (MOCVD) imishini. Ukuzinza okushisayo, ukufana okushisayo kanye neminye imingcele yokusebenza yesisekelo se-graphite ehlanganiswe ne-SiC idlala indima ewujuqu kukhwalithi yokukhula kwezinto ezibonakalayo ze-epitaxial, ngakho-ke iyingxenye eyinhloko eyinhloko yemishini ye-MOCVD.
Enqubweni yokukhiqiza i-wafer, izendlalelo ze-epitaxial ziphinde zakhiwe kwamanye ama-wafer substrates ukuze kube lula ukukhiqizwa kwamadivayisi. Amadivayisi ajwayelekile akhipha ukukhanya kwe-LED adinga ukulungisa izendlalelo ze-epitaxial zama-GaAs kuma-silicon substrates; I-SiC epitaxial layer ikhuliswe ku-substrate ye-SiC ye-conductive ukuze kwakhiwe amadivayisi afana ne-SBD, i-MOSFET, njll., ye-voltage ephezulu, amandla aphezulu kanye nezinye izinhlelo zokusebenza zamandla; I-GaN epitaxial layer yakhiwe phezu kwe-Semi-insulated SiC substrate ukuze kuqhutshekwe nokwakhiwa kwe-HEMT namanye amadivaysi ezinhlelo zokusebenza ze-RF ezifana nokuxhumana. Le nqubo ayinakuhlukaniswa nemishini ye-CVD.
Emishini ye-CVD, i-substrate ayikwazi ukubekwa ngokuqondile ensimbi noma ivele ibekwe phezu kwesisekelo se-epitaxial deposition, ngoba ihilela ukugeleza kwegesi (okuvundlile, okuqondile), izinga lokushisa, ingcindezi, ukulungiswa, ukuchithwa kokungcola nezinye izici izici zethonya. Ngakho-ke, isisekelo siyadingeka, bese i-substrate ifakwa ku-disc, bese i-epitaxial deposition yenziwa ku-substrate usebenzisa ubuchwepheshe be-CVD, futhi lesi sisekelo siyisisekelo se-graphite esihlanganisiwe (esaziwa nangokuthi i-tray).
Izisekelo ze-graphite ezinamekwe nge-SiC zivame ukusetshenziselwa ukusekela nokushisisa ama-crystal substrates e-metal-organic chemical vapor deposition (MOCVD) imishini. Ukuzinza okushisayo, ukufana okushisayo kanye neminye imingcele yokusebenza yesisekelo se-graphite ehlanganiswe ne-SiC idlala indima ewujuqu kukhwalithi yokukhula kwezinto ezibonakalayo ze-epitaxial, ngakho-ke iyingxenye eyinhloko eyinhloko yemishini ye-MOCVD.
I-Metal-organic chemical vapor deposition (MOCVD) ubuchwepheshe obujwayelekile bokukhula kwe-epitaxial kwamafilimu e-GaN ku-LED eluhlaza okwesibhakabhaka. Inezinzuzo zokusebenza okulula, izinga lokukhula elilawulekayo kanye nokuhlanzeka okuphezulu kwamafilimu e-GaN. Njengengxenye ebalulekile ekamelweni lokuphendula lemishini ye-MOCVD, isisekelo sokuthwala esisetshenziselwa ukukhula kwefilimu ye-GaN epitaxial idinga ukuba nezinzuzo zokumelana nokushisa okuphezulu, ukuguquguquka kokushisa okufanayo, ukuqina okuhle kwamakhemikhali, ukumelana nokushaqeka okushisayo okuqinile, njll. Izinto ze-graphite zingahlangana izimo ezingenhla.
Njengenye yezingxenye eziyinhloko zemishini ye-MOCVD, isisekelo se-graphite singumzimba othwala nokushisa we-substrate, enquma ngokuqondile ukufana nokuhlanzeka kwezinto zefilimu, ngakho ikhwalithi yayo ithinta ngokuqondile ukulungiswa kweshidi le-epitaxial, futhi ngesikhathi esifanayo. isikhathi, ngokwanda kwenani lokusetshenziswa kanye nokushintsha kwezimo zokusebenza, kulula kakhulu ukugqoka, okuyingxenye yezinto ezisetshenziswayo.
Nakuba i-graphite ine-conductivity enhle kakhulu yokushisa nokuzinza, inenzuzo enhle njengengxenye yesisekelo semishini ye-MOCVD, kodwa inqubo yokukhiqiza, i-graphite izogqwala i-powder ngenxa yensalela yamagesi agqwalayo kanye ne-metallic organics, kanye nempilo yesevisi Isisekelo se-graphite sizoncishiswa kakhulu. Ngesikhathi esifanayo, i-graphite powder ewayo izobangela ukungcola ku-chip.
Ukuvela kobuchwepheshe bokumboza kunganikeza ukulungiswa kwe-powder ebusweni, ukuthuthukisa ukuqhutshwa kokushisa, nokulinganisa ukusatshalaliswa kokushisa, okuye kwaba ubuchwepheshe obuyinhloko bokuxazulula le nkinga. Isisekelo segraphite endaweni yokusetshenziswa kwemishini ye-MOCVD, i-graphite base surface coating kufanele ihlangabezane nalezi zici ezilandelayo:
(1) Isisekelo segraphite singagoqwa ngokugcwele, futhi ukuminyana kuhle, ngaphandle kwalokho isisekelo segraphite kulula ukugqwala egesini edlayo.
(2) Amandla okuhlanganisa nesisekelo segraphite aphakeme ukuze kuqinisekiswe ukuthi ukunamathela akulula ukuwa ngemva kwezinga lokushisa eliphakeme eminingana kanye nemijikelezo yokushisa ephansi.
(3) Inokuqina okuhle kwamakhemikhali ukuze igweme ukwehluleka ukunamathela endaweni yokushisa ephezulu kanye nomoya ogqwalayo.
I-SiC inezinzuzo zokumelana nokugqwala, ukuguquguquka okuphezulu kokushisa, ukumelana nokushaqeka okushisayo kanye nokuzinza okuphezulu kwamakhemikhali, futhi ingasebenza kahle ku-GaN epitaxial atmosphere. Ukwengeza, i-coefficient yokwandisa okushisayo ye-SiC ihluke kancane kakhulu kuleyo ye-graphite, ngakho-ke i-SiC iyinto ekhethwayo yokumbozwa kwendawo ye-graphite base.
Njengamanje, i-SiC evamile iwuhlobo lwe-3C, 4H no-6H, futhi ukusetshenziswa kwe-SiC kwezinhlobo ze-crystal ezahlukene kuhlukile. Isibonelo, i-4H-SiC ingakha amadivaysi anamandla amakhulu; I-6H-SiC iyisimeme kunazo zonke futhi ingakha amadivaysi kagesi wezithombe; Ngenxa yesakhiwo sayo esifanayo ne-GaN, i-3C-SiC ingasetshenziselwa ukukhiqiza ungqimba lwe-GaN epitaxial nokwenza amadivayisi we-SiC-GaN RF. I-3C-SiC yaziwa nangokuthi i-β-SiC, futhi ukusetshenziswa okubalulekile kwe-β-SiC kufana nefilimu kanye nezinto zokumboza, ngakho-ke i-β-SiC okwamanje iyinhloko yokugqoka.
Indlela yokulungisa i-silicon carbide coating
Njengamanje, izindlela zokulungiselela ze-SiC coating ikakhulukazi zifaka indlela ye-gel-sol, indlela yokushumeka, indlela yokugcoba ibhulashi, indlela yokufafaza nge-plasma, indlela yokusabela kwegesi yamakhemikhali (CVR) kanye nendlela yokubeka umhwamuko wamakhemikhali (CVD).
Indlela yokushumeka:
Le ndlela iwuhlobo lokushisa okuphezulu okuqinile kwesigaba sintering, esebenzisa ngokuyinhloko ingxube ye-Si powder kanye ne-C powder njengempushana yokushumeka, i-graphite matrix ifakwa kumpusha wokushumeka, futhi ukushisa okuphezulu kokushisa kwenziwa kwigesi ye-inert. , futhi ekugcineni i-SiC coating itholakala ebusweni be-graphite matrix. Inqubo ilula futhi inhlanganisela phakathi kwe-coating kanye ne-substrate inhle, kodwa ukufana kwe-coating eduze kwesiqondiso sogqinsi kubi, okulula ukukhiqiza izimbobo eziningi futhi kuholele ekuphikisweni okungalungile kwe-oxidation.
Indlela yokuhlanganisa ibhulashi:
Indlela yokwembathisa ibhulashi iwukuxubha uketshezi oluluhlaza ebusweni be-graphite matrix, bese welapha impahla eluhlaza ezingeni lokushisa elithile ukuze ulungise ukunamathela. Inqubo ilula futhi izindleko ziphansi, kodwa ukumboza okulungiselelwe indlela yokugcoba ibhulashi kubuthakathaka kuhlanganiswe ne-substrate, ukufana kwe-coating kubi, ukumboza kuncane futhi ukumelana ne-oxidation kuphansi, nezinye izindlela ziyadingeka ukusiza. yona.
Indlela yokufafaza nge-Plasma:
Indlela yokufafaza nge-plasma iwukufafaza ngokuyinhloko izinto ezingavuthiwe ezincibilikisiwe noma ezincibilike kancane ebusweni be-graphite matrix ngesibhamu se-plasma, bese uqina futhi ubophe ukuze wenze ukunamathela. Indlela ilula ukuyisebenzisa futhi ingalungisa uqweqwe oluminyene lwe-silicon carbide, kodwa i-silicon carbide elungiselelwe indlela ngokuvamile ibuthakathaka kakhulu futhi iholela ekuqineni kwe-oxidation, ngakho-ke isetshenziselwa ukulungiswa kwe-SiC composite coating ukuze kuthuthukiswe. ikhwalithi yokumboza.
Indlela ye-gel-sol:
Indlela yejeli-sol ngokuyinhloko iwukulungisa isixazululo se-sol esifana nesokukhanya esimboza ingaphezulu le-matrix, yomiswa sibe ijeli bese siyasinkisa ukuze sithole okokunamathela. Le ndlela ilula ukuyisebenzisa futhi inezindleko eziphansi, kodwa ukumbozwa okukhiqiziwe kunokushiyeka okuthile njengokumelana nokushaqeka okuphansi okushisayo nokuqhekeka kalula, ngakho-ke akukwazi ukusetshenziswa kabanzi.
I-Chemical Gas Reaction (CVR) :
I-CVR ikhiqiza ngokuyinhloko ukunamathela kwe-SiC ngokusebenzisa impushana ye-Si ne-SiO2 ukuze ikhiqize isitimu se-SiO ezingeni lokushisa eliphezulu, futhi uchungechunge lokusabela kwamakhemikhali lwenzeka ebusweni be-substrate yezinto ezibonakalayo engu-C. Ukugqoka kwe-SiC okulungiselelwe ngale ndlela kuhlanganiswe eduze ne-substrate, kodwa izinga lokushisa lokusabela liphakeme futhi izindleko ziphakeme.
I-Chemical Vapor Deposition (CVD):
Njengamanje, i-CVD iwubuchwepheshe obuyinhloko bokulungiselela i-SiC coating endaweni engaphansi. Inqubo eyinhloko iwuchungechunge lokusabela ngokomzimba namakhemikhali wezinto ezisabelayo zesigaba segesi endaweni engaphansi, futhi ekugcineni ukunamathela kwe-SiC kulungiswa ngokubeka endaweni engaphansi. I-SiC enamathela elungiselelwe ubuchwepheshe be-CVD iboshwe eduze ebusweni be-substrate, engathuthukisa ngokuphumelelayo ukumelana ne-oxidation kanye nokumelana ne-ablative ye-substrate impahla, kodwa isikhathi sokubeka le ndlela side, futhi igesi yokusabela inobuthi obuthile. igesi.
Isimo semakethe se-SiC coated graphite base
Lapho abakhiqizi bakwamanye amazwe beqala kusenesikhathi, babenokuhola okucacile kanye nesabelo semakethe esiphezulu. Emazweni ngamazwe, abahlinzeki abakhulu besisekelo se-graphite ehlanganiswe ne-SiC yi-Dutch Xycard, Germany SGL Carbon (SGL), Japan Toyo Carbon, United States MEMC kanye nezinye izinkampani, ezithatha ngokuyisisekelo imakethe yamazwe ngamazwe. Nakuba i-China iphule ubuchwepheshe obuyinhloko bokukhula okufanayo kwe-SiC coating ebusweni be-graphite matrix, i-graphite matrix yekhwalithi ephezulu isathembele ku-SGL yaseJalimane, i-Japan Toyo Carbon namanye amabhizinisi, i-matrix ye-graphite ehlinzekwa ngamabhizinisi asekhaya ithinta isevisi. impilo ngenxa ye-thermal conductivity, i-elastic modulus, i-modulus eqinile, ukukhubazeka kwe-lattice nezinye izinkinga zekhwalithi. Imishini ye-MOCVD ayikwazi ukuhlangabezana nezidingo zokusetshenziswa kwesisekelo se-graphite esihlanganisiwe se-SiC.
Imboni ye-semiconductor yaseChina ithuthuka ngokushesha, ngokwenyuka kancane kancane kwezinga lendawo le-MOCVD epitaxial lendawo, kanye nokunye ukunwetshwa kwezinhlelo zokusebenza, imakethe yomkhiqizo wesisekelo se-graphite ye-SiC yesikhathi esizayo kulindeleke ukuthi ikhule ngokushesha. Ngokwezilinganiso zokuqala zemboni, imakethe yesisekelo se-graphite yasekhaya izodlula ama-yuan ayizigidi ezingama-500 eminyakeni embalwa ezayo.
Isisekelo se-graphite ehlanganiswe ne-SiC siyingxenye eyinhloko yemishini ehlanganisiwe ye-semiconductor yezimboni, ekwazi kahle ubuchwepheshe obuyinhloko bokukhiqiza nokukhiqizwa kwayo, futhi ukuqaphela ukwenziwa kwasendaweni kwalo lonke uchungechunge lwemboni yempahla esetshenziswayo esetshenziswayo kubaluleke kakhulu ekuqinisekiseni ukuthuthukiswa Imboni ye-semiconductor yaseChina. Inkambu yesisekelo se-graphite ehlanganiswe ne-SiC yasekhaya iyakhula, futhi ikhwalithi yomkhiqizo ingafinyelela ezingeni eliphakeme lamazwe ngamazwe maduze.
Isikhathi sokuthumela: Jul-24-2023