Ihlukile kumadivayisi ahlukene e-S1C aphishekela i-voltage ephezulu, amandla aphezulu, imvamisa ephezulu nezici zokushisa okuphezulu, umgomo wocwaningo wesekethe ehlanganisiwe ye-SiC iwukuthola ikakhulukazi isekethe yedijithali yokushisa ephezulu yesekethe yokulawula yama-ICs ahlakaniphile. Njengoba isifunda esihlanganisiwe se-SiC sensimu kagesi yangaphakathi siphansi kakhulu, ngakho-ke ithonya lesici se-microtubules lizoncipha kakhulu, lesi yisiqephu sokuqala se-monolithic SiC ehlanganisiwe ye-amplifier chip ehlanganisiwe eqinisekisiwe, umkhiqizo wangempela ophelile futhi onqunywa isivuno uphakeme kakhulu. kunama-microtubules amaphutha, ngakho-ke, ngokusekelwe kumodeli yesivuno se-SiC kanye nezinto ezibonakalayo ze-Si ne-CaAs zihlukile ngokusobala. I-chip isuselwe kubuchwepheshe be-NMOSFET bokuphelelwa amandla. Isizathu esiyinhloko ukuthi ukuhamba okuphumelelayo kwenkampani yenethiwekhi ye-SiC MOSFETs yesiteshi kuphansi kakhulu. Ukuze uthuthukise ukuhamba kwendawo ye-Sic, kuyadingeka ukuthuthukisa kanye nokwandisa inqubo ye-thermal oxidation ye-Sic.
Inyuvesi yasePurdue yenze umsebenzi omningi kumasekethe ahlanganisiwe e-SiC. Ngo-1992, imboni yathuthukiswa ngempumelelo ngokususelwa kumjikelezo ohlanganisiwe we-6H-SIC NMOSFET we-monolithic digital. I-chip iqukethe hhayi isango, noma cha isango, phezu noma esangweni, isibali esinambambili, namasekhethi e-adder uhhafu futhi ingasebenza kahle ebangeni lokushisa elingu-25°C ukuya ku-300°C. Ngo-1995, indiza yokuqala ye-SiC i-MESFET Ics yenziwa kusetshenziswa ubuchwepheshe bokuhlukanisa umjovo we-vanadium. Ngokulawula ngokunembile inani le-vanadium elijovwe, i-SiC evikelayo ingatholakala.
Kumasekhethi anengqondo edijithali, amasekhethi e-CMOS athandeka kakhulu kunesekhethi ye-NMOS. NgoSepthemba 1996, umjikelezo wokuqala ohlanganisiwe wedijithali we-6H-SIC CMOS wakhiqizwa. Idivayisi isebenzisa i-N-order ejovwe kanye nesendlalelo se-oxide ye-deposition, kodwa ngenxa yezinye izinkinga zenqubo, i-chip PMOSFETs threshold voltage iphezulu kakhulu. Ngo-March 1997 lapho kukhiqizwa isekethe yesizukulwane sesibili se-SiC CMOS. Ubuchwepheshe bokujova i-P trap kanye nongqimba lwe-thermal ukukhula kwe-oxide kwamukelwa. I-threshold voltage yama-PMOSEFT atholwe ngokuthuthukiswa kwenqubo cishe -4.5V. Wonke amasekhethi ku-chip asebenza kahle ekamelweni lokushisa aze afike ku-300°C futhi anikwa amandla ugesi owodwa, ongaba noma yikuphi ukusuka ku-5 kuya ku-15V.
Ngokuthuthuka kwekhwalithi ye-wafer ye-substrate, amasekhethi ahlanganisiwe asebenza kakhulu futhi anesivuno esiphezulu azokwenziwa. Kodwa-ke, lapho izinkinga ze-SiC nezinqubo zenqubo zixazululwa ngokuyisisekelo, ukwethembeka kwedivayisi nephakheji kuzoba yisici esiyinhloko esithinta ukusebenza kwamasekethe ahlanganisiwe e-SiC aphezulu.
Isikhathi sokuthumela: Aug-23-2022