2 Imiphumela yokuhlolwa nengxoxo
2.1Isendlalelo se-Epitaxialukujiya nokufana
Ukushuba kongqimba lwe-Epitaxial, ukugxiliswa kwe-doping kanye nokufana kungenye yezinkomba eziyinhloko zokwahlulela ikhwalithi yama-epitaxial wafers. Ugqinsi olulawulekayo ngokunembile, ukugxiliswa kwe-doping kanye nokufana ngaphakathi kwe-wafer kuyisihluthulelo sokuqinisekisa ukusebenza nokuvumelanaAmadivayisi kagesi we-SiC, kanye nogqinsi lwe-epitaxial layer kanye nokufana kokugxiliswa kwe-doping nakho kuyizisekelo ezibalulekile zokulinganisa amandla enqubo yemishini ye-epitaxial.
Umfanekiso 3 ukhombisa ukujiya okufanayo kanye nejika lokusabalalisa lika-150 mm no-200 mmI-SiC epitaxial wafers. Kungabonakala emfanekisweni ukuthi ijika lokusabalalisa ukujiya kongqimba lwe-epitaxial liyalingana mayelana nephoyinti elimaphakathi le-wafer. Isikhathi senqubo ye-epitaxial singama-600s, ugqinsi lwe-epitaxial layer engu-150mm ye-epitaxial wafer ngu-10.89 um, futhi ukufana kogqinsi kungu-1.05%. Ngokwezibalo, izinga lokukhula kwe-epitaxial lingu-65.3 um/h, okuyileveli evamile yenqubo ye-epitaxial esheshayo. Ngaphansi kwesikhathi esifanayo senqubo ye-epitaxial, ubukhulu be-epitaxial layer ye-epitaxial wafer engu-200 mm bungu-10.10 um, ukujiya okufanayo kungaphakathi kuka-1.36%, futhi izinga lokukhula lilonke lingu-60.60 um/h, elingaphansi kancane kunokukhula kwe-epitaxial okungu-150 mm. isilinganiso. Lokhu kungenxa yokuthi kukhona ukulahlekelwa okusobala endleleni lapho umthombo we-silicon kanye nomthombo wekhabhoni ugeleza usuka phezulu kwegumbi lokusabela udlule endaweni eyiwafa ukuya ezansi nomfula wegumbi lokusabela, futhi indawo eyi-wafer engu-200 mm inkulu kuno-150 mm. Igesi igeleza ebusweni be-wafer engu-200 mm ibanga elide, futhi umthombo wegesi odliwe endleleni ungaphezulu. Ngaphansi kwesimo sokuthi i-wafer ilokhu ijikeleza, ukujiya okuphelele kongqimba lwe-epitaxial kuba mncane, ngakho izinga lokukhula lihamba kancane. Sekukonke, ukujiya okufanayo kwama-epitaxial wafers angu-150 mm no-200 mm kuhle kakhulu, futhi amandla enqubo yezinto zokusebenza angahlangabezana nezidingo zamadivayisi wekhwalithi ephezulu.
2.2 Ukugxiliswa kwe-doping kwengqimba ye-Epitaxial kanye nokufana
Umfanekiso 4 ukhombisa ukufana kwe-doping kanye nokusatshalaliswa kwejika kuka-150 mm no-200 mmI-SiC epitaxial wafers. Njengoba kungabonwa emfanekisweni, ijika lokusabalalisa lokugxilisa ingqondo ku-wafer ye-epitaxial linokulinganisa okusobala okuhlobene nendawo emaphakathi ye-wafer. Ukufana kokugxiliswa kwe-doping kwezendlalelo ze-epitaxial ezingu-150 mm no-200 mm kungu-2.80% no-2.66% ngokulandelanayo, okungalawulwa ngaphakathi kuka-3%, okuyizinga elihle kakhulu lemishini efanayo yamazwe ngamazwe. Ijika lokugxilisa i-doping lesendlalelo se-epitaxial lisatshalaliswa kumumo othi "W" eduze kobubanzi, okunqunywa ikakhulukazi inkambu yokugeleza yodonga olushisayo lwe-epitaxial furnace, ngoba isiqondiso sokugeleza komoya kwesithando somlilo esivundlile se-epitaxial ukukhula sisuka. indawo yokungena yomoya (phezulu komfula) futhi ugeleza uphume ekugcineni komfula ngendlela eyisicwebezelayo endaweni eyilucwecwe; ngenxa yokuthi izinga "lokuphela kwendlela" lomthombo wekhabhoni (C2H4) liphezulu kunelomthombo we-silicon (TCS), lapho i-wafer izungeza, i-C/Si yangempela endaweni eyi-wafer iyancipha kancane kancane isuka onqenqemeni iye kuye. isikhungo (umthombo wekhabhoni ophakathi nendawo mncane), ngokuya "kwethiyori yesikhundla sokuncintisana" ka-C no-N, ukugxila kwe-doping maphakathi ne-wafer kancane kancane kuyehla kuye onqenqemeni, ukuze kutholwe ukugxila okuhle kakhulu. ukufana, unqenqema lwe-N2 lwengezwa njengesinxephezelo phakathi nenqubo ye-epitaxial ukuze kunciphe ukwehla kokugxilisa kwe-doping ukusuka maphakathi kuya onqenqemeni, ukuze ijika lokugcina lokugxilisa i-doping liveze umumo othi "W".
2.3 Amaphutha e-Epitaxial layer
Ngaphezu kokuqina nokugxiliswa kwe-doping, izinga lokulawula iphutha le-epitaxial layer liphinde libe ipharamitha eyinhloko yokukala ikhwalithi yama-epitaxial wafers kanye nenkomba ebalulekile yekhono lenqubo yemishini ye-epitaxial. Nakuba i-SBD ne-MOSFET zinezidingo ezihlukene zokukhubazeka, iziphambeko ze-morphology ezisobala kakhulu njengokulimala kokuwa, ukonakala kukanxantathu, ukonakala kwezaqathi, ukukhubazeka kwenkanyezi enomsila, njll. kuchazwa njengokushiyeka okubulalayo kwemishini ye-SBD ne-MOSFET. Amathuba okwehluleka kwama-chips aqukethe lezi zinkinga aphezulu, ngakho-ke ukulawula inani lamaphutha okubulala kubaluleke kakhulu ekuthuthukiseni ukuvunwa kwe-chip nokunciphisa izindleko. Umfanekiso 5 ubonisa ukusatshalaliswa kweziphambeko ezibulalayo ezingu-150 mm kanye nama-200 mm ama-SiC epitaxial wafers. Ngaphansi kwesimo sokuthi akukho ukungalingani okusobala esilinganisweni se-C / Si, ukukhubazeka kwe-carrot kanye nokukhubazeka kwe-comet kungaqedwa ngokuyisisekelo, kuyilapho ukukhubazeka kokudonsa kanye nonxantathu kuhlobene nokulawula ukuhlanzeka ngesikhathi sokusebenza kwemishini ye-epitaxial, izinga lokungcola kwe-graphite. izingxenye ekamelweni lokuphendula, kanye nekhwalithi ye-substrate. Kusukela kuThebula 2, kungabonakala ukuthi ukuminyana kwesici sokubulala okungu-150 mm kanye nama-200 mm epitaxial wafers kungalawulwa ngaphakathi kwezinhlayiya ezingu-0.3/cm2, okuyizinga elihle kakhulu lohlobo olufanayo lwemishini. Izinga elibulalayo lokulawula ukuminyana kwe-epitaxial wafer engu-150 mm lingcono kunalelo le-epitaxial wafer engu-200 mm. Lokhu kungenxa yokuthi inqubo yokulungiselela i-substrate engu-150 mm ivuthwe kakhulu kunaleyo ka-200 mm, ikhwalithi ye-substrate ingcono, futhi izinga lokulawula ukungcola lika-150 mm graphite reaction chamber lingcono.
2.4 I-Epitaxial wafer surface roughness
Umfanekiso wesi-6 ubonisa izithombe ze-AFM ezingaphezulu kuka-150 mm kanye nama-200 mm ama-SiC epitaxial wafers. Kungabonakala emfanekisweni ukuthi impande engaphezulu isho ubulukhuni obuyisikwele u-Ra ka-150 mm kanye nama-epitaxial wafers angu-200 mm ngu-0.129 nm no-0.113 nm ngokulandelana, futhi ingaphezulu longqimba lwe-epitaxial libushelelezi ngaphandle kwesenzo esicacile sokuhlanganisa i-macro-step. Lesi simo sibonisa ukuthi ukukhula kwesendlalelo se-epitaxial njalo kugcina imodi yokukhula kokugeleza kwesinyathelo phakathi nayo yonke inqubo ye-epitaxial, futhi akukho ukuhlanganiswa kwesinyathelo okwenzekayo. Kungabonakala ukuthi ngokusebenzisa inqubo yokukhula kwe-epitaxial eyenziwe kahle, izendlalelo ze-epitaxial ezibushelelezi zingatholakala kuma-substrates angama-angle aphansi angu-150 mm no-200 mm.
3 Isiphetho
Ama-epitaxial wafers angama-150 mm kanye nama-200 mm 4H-SiC alungiselelwe ngempumelelo kuma-substrates asekhaya kusetshenziswa imishini yokukhula ye-epitaxial engu-200 mm ye-SiC ethuthukisiwe, kanye nenqubo ye-epitaxial ye-homogeneous efanele i-150 mm kanye ne-200 mm yathuthukiswa. Izinga lokukhula kwe-epitaxial lingaba likhulu kuno-60 μm/h. Ngenkathi ihlangabezana nemfuneko ye-epitaxy yesivinini esikhulu, ikhwalithi ye-epitaxial wafer inhle kakhulu. Ukufana kogqinsi kwama-wafers we-SiC epitaxial angu-150 mm no-200 mm kungalawuleka ngaphakathi kuka-1.5%, ukufana okugxilile kungaphansi kuka-3%, ukuminyana okubulalayo kungaphansi kwezinhlayiya ezingu-0.3/cm2, kanti i-epitaxial surface roughness isho i-Ra yesikwele. ingaphansi kuka-0.15 nm. Izinkomba zenqubo eyinhloko yama-epitaxial wafers zisezingeni eliphezulu embonini.
Umthombo: Isisetshenziswa Esikhethekile Semboni Ye-elekthronikhi
Umbhali: Xie Tianle, Li Ping, Yang Yu, Gong Xiaoliang, Ba Sai, Chen Guoqin, Wan Shengqiang
(48th Research Institute of China Electronics Technology Group Corporation, Changsha, Hunan 410111)
Isikhathi sokuthumela: Sep-04-2024