Njengamanje, imboni yeSiC iyaguquka isuka ku-150 mm (6 amayintshi) iye ku-200 mm (8 amayintshi). Ukuze kuhlangatshezwane nesidingo esiphuthumayo samawafa amakhulu e-SiC homoepitaxial embonini, 150mm kanye no-200mm.4H-SiC amawafa e-homoepitaxialzalungiswa ngempumelelo kuma-substrates asekhaya kusetshenziswa imishini yokukhulisa i-epitaxial engu-200mm SiC ethuthukiswe ngokuzimela. Inqubo ye-homoepitaxial efaneleka ku-150mm kanye no-200mm yathuthukiswa, lapho izinga lokukhula kwe-epitaxial lingaba likhulu kuno-60um/h. Ngenkathi ihlangana ne-epitaxy yesivinini esikhulu, ikhwalithi ye-epitaxial wafer inhle kakhulu. Ubukhulu obufanayo buyi-150 mm no-200 mmI-SiC epitaxial wafersingalawulwa ngaphakathi kwe-1.5%, ukufana okugxilile kungaphansi kuka-3%, ukuminyana okubulalayo kungaphansi kwezinhlayiya ezingu-0.3/cm2, futhi i-epitaxial surface roughness impande isho isikwele esingu-Ra singaphansi kuka-0.15nm, futhi zonke izinkomba zenqubo eyinhloko ziku- izinga eliphezulu lemboni.
I-Silicon Carbide (SiC)ungomunye wabamele izinto ze-semiconductor yesizukulwane sesithathu. Inezici zamandla ensimu yokuwohloka okuphezulu, ukuhanjiswa kwe-thermal okuhle kakhulu, isivinini esikhulu sokukhukhuleka kwe-electron saturation, kanye nokumelana nemitha eqinile. Ikhulise kakhulu amandla okucubungula amandla emishini yamandla futhi ingahlangabezana nezidingo zesevisi yesizukulwane esilandelayo semishini kagesi yamadivayisi anamandla amakhulu, usayizi omncane, izinga lokushisa eliphezulu, imisebe ephezulu kanye nezinye izimo ezimbi kakhulu. Kunganciphisa isikhala, kunciphise ukusetshenziswa kwamandla futhi kunciphise izidingo zokupholisa. Ilethe izinguquko ezinguqukweni ezimotweni ezintsha zamandla, ezokuthutha ngojantshi, amagridi ahlakaniphile kanye neminye imikhakha. Ngakho-ke, ama-semiconductors e-silicon carbide aqashelwe njengento efanelekile ezohola isizukulwane esilandelayo samadivayisi anamandla kagesi aphezulu. Eminyakeni yamuva nje, ngenxa yokwesekwa kwenqubomgomo kazwelonke yokuthuthukiswa kwemboni yesizukulwane sesithathu ye-semiconductor, ucwaningo nokuthuthukiswa nokwakhiwa kohlelo lwemboni yemishini ye-SiC engu-150 mm sekuqediwe ngokuyisisekelo eShayina, futhi ukuphepha kochungechunge lwezimboni kuye kwaqedwa. kuqinisekisiwe ngokuyisisekelo. Ngakho-ke, ukugxila kwemboni kancane kancane kushintshele ekulawuleni izindleko kanye nokwenza ngcono ukusebenza kahle. Njengoba kuboniswe kuThebula 1, uma kuqhathaniswa no-150 mm, i-200 mm SiC inezinga eliphezulu lokusetshenziswa konqenqema, futhi ukukhishwa kwama-wafer chips angakhuphuka cishe izikhathi ezingu-1.8. Ngemuva kokuvuthwa kobuchwepheshe, izindleko zokukhiqiza ze-chip eyodwa zingancishiswa ngo-30%. Ukuphumelela kwezobuchwepheshe okungu-200 mm kuyindlela eqondile "yokunciphisa izindleko kanye nokwandisa ukusebenza kahle", futhi kuyisihluthulelo semboni yezwe lami ye-semiconductor "igijime ngokuhambisana" noma "ihole".
Ihlukile kunqubo yedivayisi ye-Si,Amadivayisi kagesi we-SiC semiconductorzonke zicutshungulwa futhi zilungiswe ngezingqimba ze-epitaxial njengetshe legumbi. Ama-wafers e-Epitaxial ayizinto ezibalulekile eziyisisekelo zamadivayisi kagesi we-SiC. Izinga lesendlalelo se-epitaxial linquma ngokuqondile isivuno sedivayisi, futhi izindleko zayo zibalelwa ku-20% wezindleko zokukhiqiza i-chip. Ngakho-ke, ukukhula kwe-epitaxial kuyisixhumanisi esibalulekile esiphakathi kumadivayisi wamandla we-SiC. Umkhawulo ophezulu wezinga lenqubo ye-epitaxial unqunywa imishini ye-epitaxial. Njengamanje, idigri yokwenziwa kwasendaweni yemishini ye-epitaxial engu-150mm SiC e-China iphezulu uma kuqhathaniswa, kodwa ukwakheka okuphelele kuka-200mm kusele ngemuva kwezinga lamazwe ngamazwe ngesikhathi esifanayo. Ngakho-ke, ukuze kuxazululwe izidingo eziphuthumayo kanye nezinkinga zebhodlela zobukhulu obukhulu, ukukhiqizwa kwezinto eziphezulu ze-epitaxial zokuthuthukiswa kwemboni yasekhaya yesizukulwane sesithathu semiconductor, leli phepha lethula imishini ye-epitaxial engu-200 mm SiC ethuthukiswe ngempumelelo ezweni lami, futhi ufunda inqubo ye-epitaxial. Ngokulungiselela amapharamitha enqubo afana nezinga lokushisa lenqubo, izinga lokugeleza kwegesi yenkampani yenethiwekhi, isilinganiso se-C/Si, njll., ukufana okugxilile okungu-<3%, ukushuba okungafani no-<1.5%, ukuhwaqaza okungu-Ra <0.2 nm kanye nokuminyana okubulalayo okungu-<0.3 izinhlamvu /cm2 ka-150 mm kanye nama-200 mm SiC epitaxial wafers ane-200 mm silicon carbide epitaxial eyenziwe ngokuzimela isithando somlilo ziyatholakala. Izinga lenqubo yemishini lingahlangabezana nezidingo zokulungiswa kwedivayisi yamandla we-SiC yekhwalithi ephezulu.
1 Isilingo
1.1 Umgomo weI-SiC epitaxialinqubo
Inqubo yokukhula kwe-homoepitaxial ye-4H-SiC ngokuyinhloko ihlanganisa izinyathelo eziyinhloko ezingu-2, okungukuthi, izinga lokushisa eliphezulu elingaphakathi kwe-situ etching ye-substrate engu-4H-SiC kanye nenqubo yokubeka umhwamuko wamakhemikhali ofanayo. Inhloso eyinhloko ye-substrate in-situ etching ukususa umonakalo ongaphansi komhlaba we-substrate ngemva kokupholishwa kwe-wafer, uketshezi olusele olucwebezelayo, izinhlayiya nongqimba lwe-oxide, kanye nesakhiwo sesinyathelo se-athomu esivamile singakhiwa endaweni engaphansi kwe-substrate ngokuqoshwa. I-in-situ etching ngokuvamile yenziwa endaweni ye-hydrogen. Ngokwezidingo zangempela zenqubo, inani elincane legesi elisizayo lingabuye lifakwe, njenge-hydrogen chloride, i-propane, i-ethylene noma i-silane. Izinga lokushisa le-in-situ hydrogen etching ngokuvamile lingaphezulu kuka-1 600 ℃, futhi ukucindezela kwegumbi lokusabela ngokuvamile kulawulwa ngaphansi kuka-2 × 104 Pa ngesikhathi senqubo yokufaka.
Ngemuva kokuthi indawo engaphansi icushwe ngokufakwa kwe-in-situ, ingena enqubweni yokubeka umhwamuko wamakhemikhali wokushisa okuphezulu, okungukuthi, umthombo wokukhula (njenge-ethylene/propane, TCS/silane), umthombo we-doping (umthombo we-doping we-nitrogen , umthombo we-doping wohlobo lwe-P TMAl), kanye negesi eyinsalela efana ne-hydrogen chloride ithuthelwa egumbini lokusabela ngokugeleza okukhulu kwegesi yenethiwekhi. (ngokuvamile i-hydrogen). Ngemuva kokuthi igesi iphendule egumbini lokuphendula izinga lokushisa eliphezulu, ingxenye yesandulela isabela ngamakhemikhali kanye nezikhangisi endaweni eyisicwecwana, bese kwakheka ungqimba lwe-epitaxial lwe-crystal eyodwa-crystal homogeneous 4H-SiC ene-doping concentration ethize, ukujiya okuthile, kanye nekhwalithi ephezulu. endaweni engaphansi kusetshenziswa i-single-crystal 4H-SiC substrate njengesifanekiso. Ngemuva kweminyaka yokuhlolwa kobuchwepheshe, ubuchwepheshe be-4H-SiC homoepitaxial ngokuyisisekelo buvuthiwe futhi busetshenziswa kabanzi ekukhiqizeni izimboni. Ubuchwepheshe be-homoepitaxial obusetshenziswa kakhulu be-4H-SiC emhlabeni bunezici ezimbili ezijwayelekile:
(1) Ukusebenzisa i-off-axis (okuhlobene <0001> nendiza yekristalu, ukuya <11-20> isiqondiso sekristalu) i-oblique cut substrate njengesifanekiso, ungqimba oluphezulu lwe-single-crystal 4H-SiC epitaxial ngaphandle kokungcola ifakwe ku-substrate ngendlela yokukhula kwesinyathelo sokugeleza. Ukukhula kokuqala kwe-4H-SiC homoepitaxial kwasebenzisa i-crystal substrate enhle, okungukuthi, indiza ye-<0001> Si ukuze ikhule. Ukuminyana kwezinyathelo ze-athomu ebusweni be-crystal substrate eqondile kuphansi futhi amasimu abanzi. Ukukhula kwe-nucleation enezinhlangothi ezimbili kulula ukwenzeka ngesikhathi senqubo ye-epitaxy ukwakha i-3C crystal SiC (3C-SiC). Ngokusikwa kwe-off-axis, ukuminyana okuphezulu, izinyathelo ze-athomu ezinobubanzi bethala elincane zingangeniswa ebusweni be-substrate engu-4H-SiC <0001>, futhi isandulela esikhangisiwe singafinyelela ngempumelelo indawo yesinyathelo se-athomu ngamandla angaphezulu aphansi ngokusakazwa komhlaba. . Esinyathelweni, indawo eyandulela i-athomu/iqembu le-molecular iyingqayizivele, ngakho-ke kumodi yokukhula kokugeleza kwesinyathelo, ungqimba lwe-epitaxial lungakwazi njengefa ngokuphelele ukulandelana kokunqwabelaniswa kongqimba lwe-athomu olukabili lwe-Si-C lwe-substrate ukwenza ikristalu eyodwa enekristalu efanayo. isigaba njenge-substrate.
(2) Ukukhula kwe-epitaxial ngesivinini esiphezulu kutholakala ngokwethula umthombo we-silicon oqukethe i-chlorine. Ezinhlelweni ezivamile ze-SiC chemical vapor deposition, i-silane ne-propane (noma i-ethylene) yimithombo eyinhloko yokukhula. Enqubweni yokukhulisa izinga lokukhula ngokwandisa izinga lokugeleza komthombo wokukhula, njengoba ukulingana kwengxenye ye-silicon iqhubeka nokukhula, kulula ukwakha amaqoqo e-silicon nge-homogeneous gas phase nucleation, enciphisa kakhulu izinga lokusebenzisa umthombo we-silicon. Ukwakhiwa kwamaqoqo e-silicon kunciphisa kakhulu ukuthuthukiswa kwezinga lokukhula kwe-epitaxial. Ngesikhathi esifanayo, amaqoqo e-silicon angaphazamisa ukukhula kokugeleza kwesinyathelo futhi abangele i-nucleation yokukhubazeka. Ukuze ugweme i-homogeneous gas phase nucleation kanye nokwandisa izinga lokukhula kwe-epitaxial, ukwethulwa kwemithombo ye-silicon esekelwe ku-chlorine okwamanje kuyindlela evamile yokwandisa izinga lokukhula kwe-epitaxial ye-4H-SiC.
1.2 200 mm (8-intshi) okokusebenza kwe-SiC epitaxial nezimo zenqubo
Ukuhlola okuchazwe kuleli phepha konke kwenziwe odongeni olushisayo oluvundlile lwe-monolithic oluyi-150/200 mm (6/8-intshi) oluhambisanayo lwe-SiC epitaxial oluthuthukiswe ngokuzimela yi-48th Institute of China Electronics Technology Group Corporation. Isithando somlilo se-epitaxial sisekela ukulayisha nokulayishwa kwe-wafer okuzenzakalelayo ngokugcwele. Umfanekiso we-1 umdwebo we-schematic wesakhiwo sangaphakathi segumbi lokuphendula lemishini ye-epitaxial. Njengoba kuboniswe kuMfanekiso 1, udonga lwangaphandle lwegumbi lokusabela luyinsimbi ye-quartz ene-interlayer epholile ngamanzi, futhi ingaphakathi lensimbi liyigumbi lokuphendula lokushisa eliphezulu, elakhiwe nge-thermal insulation carbon feeling, high-purrity. i-graphite cavity, isisekelo esizungezayo segesi ye-graphite, njll. Yonke insimbi yequartz imbozwe ikhoyili yokungeniswa eyicylindrical, futhi Igumbi lokusabela elingaphakathi kwensimbi lishisiswe ngozibuthe ngokunikezwa kwamandla okungeniswa kwe-medium-frequency. Njengoba kuboniswe kuMfanekiso 1 (b), igesi yokuthwala, igesi yokusabela, negesi ye-doping konke kugeleza endaweni eyiluphala ngokugeleza kwe-laminar evundlile ukusuka phezulu komfula wegumbi lokusabela ukuya ezansi komfula futhi kuphuma emsileni. ukuphela kwegesi. Ukuqinisekisa ukuvumelana ngaphakathi kwe-wafer, i-wafer ephethwe isisekelo esintantayo somoya sihlala sijikeleziswa phakathi nenqubo.
I-substrate esetshenziswe ekuhloleni iyindawo yokuthengisa engu-150 mm, 200 mm (6 amayintshi, 8 amayintshi) <1120> inkomba engu-4° off-angle conductive n-type 4H-SiC epholishelwe emaceleni ekabili i-SiC substrate ekhiqizwa u-Shanxi Shuoke Crystal. I-Trichlorosilane (SiHCl3, TCS) ne-ethylene (C2H4) zisetshenziswa njengemithombo eyinhloko yokukhula ekuhlolweni kwenqubo, lapho i-TCS ne-C2H4 kusetshenziswa khona njengomthombo we-silicon kanye nomthombo wekhabhoni ngokulandelana, i-high-purity nitrogen (N2) isetshenziswa njenge-n- uhlobo lomthombo we-doping, kanye ne-hydrogen (H2) isetshenziswa njengegesi ehlanjululwayo kanye negesi yokuthwala. Izinga lokushisa lenqubo ye-epitaxial liyi-1 600 ~ 1 660 ℃, ingcindezi yenqubo ingu-8 × 103 ~ 12 × 103 Pa, futhi izinga lokugeleza kwegesi yenkampani ye-H2 yi-100～140 L/min.
1.3 Ukuhlolwa kwe-Epitaxial wafer nokuhlukaniswa kwezinhlamvu
I-spectrometer ye-infrared i-Fourier (umkhiqizi wezinto zokusebenza i-Thermalfisher, imodeli iS50) kanye nesihloli sokugxilisa se-mercury probe (umkhiqizi wezisetshenziswa i-Semilab, imodeli 530L) kwasetshenziswa ukukhombisa incazelo nokusatshalaliswa kogqinsi lwe-epitaxial layer kanye nokugxila kwe-doping; ukujiya nokugxiliswa kwe-doping kwephoyinti ngalinye kungqimba lwe-epitaxial kwanqunywa ngokuthatha amaphuzu ngomugqa wobubanzi onqamula umugqa ovamile wonqenqema lwereferensi eyinhloko ku-45° maphakathi ne-wafer ngokukhishwa konqenqema okungu-5 mm. Ku-wafer engu-150 mm, amaphuzu angu-9 athathwe ngomugqa owodwa we-diameter (amadayamitha amabili aye-perpendicular komunye nomunye), futhi nge-wafer engu-200 mm, amaphuzu angu-21 athathwe, njengoba kuboniswe kuMfanekiso 2. Isibonakhulu samandla e-athomu (umkhiqizi wezinsimbi). I-Bruker, imodeli ye-Dimension Icon) yasetshenziselwa ukukhetha izindawo ezingu-30 μm×30 μm endaweni emaphakathi nendawo yomkhawulo (5 mm onqenqemeni. ukususwa) kwe-wafer ye-epitaxial ukuhlola ubulukhuni obungaphezulu be-epitaxial layer; ukonakala kwesendlalelo se-epitaxial kukalwe kusetshenziswa isihloli sesici esingaphezulu (umkhiqizi wezisetshenziswa i-China Electronics Isithwebuli se-3D siphawulwe ngelenzwa ye-radar (imodeli ye-Mars 4410 pro) evela ku-Kefenghua.
Isikhathi sokuthumela: Sep-04-2024